Design of a W-band extended interaction klystron

Wei Ying; Yang Jitao; Zhou Jun; Li Dongfeng; Ouyang Jiajia; Dou Yu

doi:10.11884/HPLPB202032.200207

Volume 32 Issue 10

Sep. 2020

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Wei Ying, Yang Jitao, Zhou Jun, et al. Design of a W-band extended interaction klystron[J]. High Power Laser and Particle Beams, 2020, 32: 103007. doi: 10.11884/HPLPB202032.200207

Citation:

Wei Ying, Yang Jitao, Zhou Jun, et al. Design of a W-band extended interaction klystron[J]. High Power Laser and Particle Beams, 2020, 32: 103007. doi: 10.11884/HPLPB202032.200207

Wei Ying, Yang Jitao, Zhou Jun, et al. Design of a W-band extended interaction klystron[J]. High Power Laser and Particle Beams, 2020, 32: 103007. doi: 10.11884/HPLPB202032.200207

Citation:

Wei Ying, Yang Jitao, Zhou Jun, et al. Design of a W-band extended interaction klystron[J]. High Power Laser and Particle Beams, 2020, 32: 103007. doi: 10.11884/HPLPB202032.200207

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Design of a W-band extended interaction klystron

doi: 10.11884/HPLPB202032.200207

Beijing Vacuum Electronics Research Institute, Beijing 100015, China

Received Date: 2020-07-29
Rev Recd Date: 2020-09-11
Publish Date: 2020-09-29

Abstract

Abstract

This paper briefly introduces the design of a W-band extended interaction klystron (EIK), and gives the test results. The high frequency extended interaction circuit consisted of five 5-gap buncher cavities and one 11-gap output cavity which can obtain wider bandwidth. This ladder-type multi-gap cavity circuit is easy to fabricate and supports greater energy margins. The π-mode is selected as the operating mode of the 5-gap (or 11-gap) cavities. By now, with an electron beam of 17 kV and 0.78 A, the EIK has achieved a peak output power of 2 kW, bandwidth of 500 MHz, gain of 40 dB, and duty cycle of 5%.
- microwave power device,
- extended-interaction klystron,
- W-band,
- electronic optics system

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References(15)

References

[1]	Wessel-Berg T. A general theory of klystrons with arbitrary, extended interaction fields[R]. Hansen Laboratories ML-376, 1957.
[2]	Steer B, Roitman A, Horoyski P, et al. Advantages of extended interaction klystron technology at millimeter and sub-millimeter frequencies[C]//IEEE International Vacuum Electronics Conference. 2007: 1049-1053.
[3]	Steer B, Roitman A, Horoyski P, et al. High power millimeter-wave extended interaction klystrons for ground, airborne and space radars[C]//IEEE International Vacuum Electronics Conference. 2009.
[4]	Hyttinen M, Roitman A, Horoyski P, et al. A compact, high power, sub-millimeter-wave extended interaction klystron[C]//IEEE International Vacuum Electronics Conference. 2008: 297.
[5]	Berry D, Deng H, Dobbs R, et al. Practical aspects of EIK technology[J]. IEEE Trans Electron Devices, 2014, 61(6): 1830-1835. doi: 10.1109/TED.2014.2302741
[6]	Berry D, Roitman A, Steer B. State-of-the-art W-band extended interaction klystron for the CloudSat program[C]//IEEE International Vacuum Electronics Conference. 2004: 75-76.
[7]	Horoyski P, Berry D, Steer B. A 2 GHz bandwidth, high power W-band extended interaction klystron[C]//IEEE International Vacuum Electronics Conference. 2007: 151-152.
[8]	Zheng Yuan, Luhmann N C, Gamzina D, et al. Double multi-gap output cavity for low voltage ultra-compact W-band klystron[C]//IEEE International Vacuum Electronics Conference. 2019.
[9]	Zeng Zaojin, Zhou Lin, Li Wenjun, et al. Design and optimization of a W-band extended interaction klystron amplifier[C]//IEEE International Vacuum Electronics Conference. 2015.
[10]	Zhu Xiaofang, Jin Xiaolin, Huang Lili, et al. Study of a W-band sheet-beam extended interaction klystron[C]//IEEE International Vacuum Electronics Conference. 2015.
[11]	Chang Zhiwei, Meng Lin, Yin Yong, et al. Circuit design of a compact 5-kV W-band extended interaction klystron[J]. IEEE Trans Electron Devices, 2018, 65(3): 1179-1184. doi: 10.1109/TED.2018.2797051
[12]	Li Shasha, RuanCunjun, Member S, et al. Novel coupling cavities for improving the performance of G-band ladder-type multigap extended interaction klystrons[J]. IEEE Trans Plasma Science, 2020, 48(5): 1350-1356. doi: 10.1109/TPS.2020.2982957
[13]	邢俊毅, 冯进军. 毫米波扩展互作用器件[J]. 真空电子技术, 2010(2):33-37. (Xing Junyi, Feng Jinjun. Millimeter wave extended interaction device[J]. Vacuum Electronics, 2010(2): 33-37
[14]	丁耀根. 大功率速调管的设计制造与应用[M]. 北京: 国防工业出版社, 2010. Ding Yaogen. Design, manufacture and application of high power klystron[M]. Beijing: National Defense Industry Press, 2007
[15]	黄传禄, 丁耀根, 王勇, 等. 多间隙耦合腔注波互作用计算分析[J]. 真空科学与技术学报, 2012, 32(7):605-610. (Huang Chuanlu, Ding Yaogen, Wang Yong, et al. Calculation and analysis of beam-wave interactions in multi-gap coupled cavity[J]. Chinese Journal of Vacuum Science and Technology, 2012, 32(7): 605-610