Simulation and Experimental Investigation of the Channel Electron Multiplier

Zhu Jiaqi; Cong Xiaoqing; Chen Lin; Hu Zexun; Wang Jian; Shen Shaowei; Zhang Huan; Lin Yanjian; Jiang Weijie; Chen Pin; Li Junlin

doi:10.11884/HPLPB202638.250389

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Article Navigation > High Power Laser and Particle Beams > 2026 > Accepted Manuscript

Zhu Jiaqi, Cong Xiaoqing, Chen Lin, et al. Simulation and Experimental Investigation of the Channel Electron Multiplier[J]. High Power Laser and Particle Beams. doi: 10.11884/HPLPB202638.250389

Citation:

Zhu Jiaqi, Cong Xiaoqing, Chen Lin, et al. Simulation and Experimental Investigation of the Channel Electron Multiplier[J]. High Power Laser and Particle Beams. doi: 10.11884/HPLPB202638.250389

Zhu Jiaqi, Cong Xiaoqing, Chen Lin, et al. Simulation and Experimental Investigation of the Channel Electron Multiplier[J]. High Power Laser and Particle Beams. doi: 10.11884/HPLPB202638.250389

Citation:

Zhu Jiaqi, Cong Xiaoqing, Chen Lin, et al. Simulation and Experimental Investigation of the Channel Electron Multiplier[J]. High Power Laser and Particle Beams. doi: 10.11884/HPLPB202638.250389

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Simulation and Experimental Investigation of the Channel Electron Multiplier

doi: 10.11884/HPLPB202638.250389

1.
North Night Vision Technology (Nanjing) Research Institute Co., Ltd., Nanjing 211106, China
2.
School of Network and Communication Engineering, Jinling Institute of Technology, Nanjing 211169, China

Received Date: 2025-11-01
Accepted Date: 2026-02-02
Rev Recd Date: 2022-03-01

Available Online: 2026-04-15

Abstract

Abstract

Background
The Single-Channel Electron Multiplier (CEM), as a high-gain electrovacuum device, is widely utilized in fields such as mass spectrometry and space exploration. Currently, domestically produced CEMs often face challenges including relatively low gain and inconsistent performance.
Purpose
To address these issues, this study undertakes the development of high-gain CEMs through both simulation and experimental approaches.
Methods
For the simulation, a three-dimensional model of the CEM was established using CST Studio Suite, incorporating the finite integration technique, the Monte Carlo method, and the Furman secondary electron emission model. This model systematically simulated the electron trajectories and multiplication processes within the channel.
Results
The simulation results indicate that the electron multiplication characteristics of CEMs are significantly influenced by structural parameters and functional thin films. The optimal structural parameters were identified as a funnel diameter of 13 mm, a channel diameter of 1.2 mm, a straight-channel length of 14 mm, and a bending radius of 15.5 mm.Experimentally, the fabricated CEM channels exhibited consistent morphology with a low film roughness of approximately 0.65 nm, indicating good process consistency and high smoothness of the inner walls, which aligns well with the theoretical design. A comparison between two CEMs with different structural parameters revealed that the optimized structure achieved a nearly fivefold increase in gain under the same operating voltage. Furthermore, after depositing an approximately 5 nm thick Al₂O₃ functional film on the inner channel wall via atomic layer deposition, the gain of the CEM increased by approximately 20 times under the same voltage, underscoring the critical role of functional films with a high secondary electron emission coefficient in enhancing gain.
Conclusions
Through theoretical simulation and performance optimization analysis, this study provides key parameter optimization guidelines and a technical foundation for the localized design of CEMs.
- Single-Channel Electron Multiplier,
- Finite integral method,
- Monte Carlo method,
- Atomic Layer Deposition,
- Gain

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References(13)

References

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