Simulation of SiC based turn-off light initiated multi gate semiconductor switches

Cai Ping; Mao Jiangling; Liu Wenfeng; Luan Chongbiao; Fu Xiang; Yuan Jianqiang

doi:10.11884/HPLPB202638.250398

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Article Navigation > High Power Laser and Particle Beams > 2026 > Accepted Manuscript

Cai Ping, Mao Jiangling, Liu Wenfeng, et al. Simulation of SiC based turn-off light initiated multi gate semiconductor switches[J]. High Power Laser and Particle Beams. doi: 10.11884/HPLPB202638.250398

Citation:

Cai Ping, Mao Jiangling, Liu Wenfeng, et al. Simulation of SiC based turn-off light initiated multi gate semiconductor switches[J]. High Power Laser and Particle Beams. doi: 10.11884/HPLPB202638.250398

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Simulation of SiC based turn-off light initiated multi gate semiconductor switches

doi: 10.11884/HPLPB202638.250398

Cai Ping^{1, 2
,},
Mao Jiangling^{1, 2},
Liu Wenfeng^{1, 2},
Luan Chongbiao^{1
,
,},
Fu Xiang¹,
Yuan Jianqiang^{1, 2
,
,}

1.
Institute of Fluid Physics, China Academy of Engineering Physics, Mianyang 621900, China
2.
Graduate School of China Academy of Engineering Physics, Mianyang 621900, China

Received Date: 2025-11-05
Accepted Date: 2026-02-04
Rev Recd Date: 2026-02-09

Available Online: 2026-03-06

Abstract

Abstract

Background
SiC-based light-initiated multi-gate semiconductor switches (LIMS) deliver superior response speeds due to the faster injection of photo-generated carriers compared to conventional electrically injected carriers. They can be used in a variety of applications, including radars, accelerators, and pulse sources.
Purpose
Regarding the problems such as the long falling edge and slow turn-off speed of LIMS, an anode structure design with turn-off capability is proposed.
Methods
The model and its parameters are calibrated based on experimental data, and the simulation is used to study the conduction characteristics of devices with a turn-off anode structure.
Results
The simulation results show that devices with a turn-off anode structure can achieve positive feedback in the pnpn configuration following laser activation, thereby increasing the conduction current. When the laser pulse ends, the recombination of photo-generated carriers and the extraction of carriers from the base region by the turn-off anode structure significantly enhance the turn-off speed of the device.
Conclusions
With a 4 kV anode bias and a peak current of several hundred amperes, the modified LIMS reduces the full-width-at-half-maximum of the current pulse from 0.79 µs to <100 ns and shortens the turn-off time to 0.6 µs. These results indicate suitability for repetitive operation at kilohertz frequencies and above.
- silicon carbide,
- light-initiated multi-gate semiconductor switches,
- anode structure,
- turn-off speed

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References(24)

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