Investigation of the performance of vertical extrinsic photoconductive switches based on nitrogen-doped diamond

Li Pengyu; Yu Cui; He Zezhao; Liu Jingliang; Chen Xiangjin; Ma Mengyu; Zhou Chuangjie; Liu Qingbin; Yu Hao; Feng Zhihong; Zhou Biao; Zhao Huifeng; Xu Chunliang; You Hengguo; Wang Yi; Zhou Guo; Wang Yinglin; Guo Jianchao; Han Jingwen; Qi Zhihua

doi:10.11884/HPLPB202638.250424

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Article Navigation > High Power Laser and Particle Beams > 2026 > Accepted Manuscript

Li Pengyu, Yu Cui, He Zezhao, et al. Investigation of the performance of vertical extrinsic photoconductive switches based on nitrogen-doped diamond[J]. High Power Laser and Particle Beams. doi: 10.11884/HPLPB202638.250424

Citation:

Li Pengyu, Yu Cui, He Zezhao, et al. Investigation of the performance of vertical extrinsic photoconductive switches based on nitrogen-doped diamond[J]. High Power Laser and Particle Beams. doi: 10.11884/HPLPB202638.250424

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Investigation of the performance of vertical extrinsic photoconductive switches based on nitrogen-doped diamond

doi: 10.11884/HPLPB202638.250424

Li Pengyu^{1, 2
,},
Yu Cui^{1, 2
,
,},
He Zezhao^{1, 2},
Liu Jingliang^{1, 2},
Chen Xiangjin¹,
Ma Mengyu^{1, 2},
Zhou Chuangjie^{1, 2},
Liu Qingbin^{1, 2},
Yu Hao^{1, 2},
Feng Zhihong^{1, 2
,
,},
Zhou Biao¹,
Zhao Huifeng¹,
Xu Chunliang¹,
You Hengguo¹,
Wang Yi¹,
Zhou Guo¹,
Wang Yinglin^{1, 2},
Guo Jianchao^{1, 2},
Han Jingwen¹,
Qi Zhihua¹

1.
The13th Research Institute of China Electronics Technology Group Corporation, Shijiazhuang 050057, China
2.
National Key Laboratory of Solid-State Microwave Devices and Circuits, Shijiazhuang 050057, China

Received Date: 2025-11-24
Accepted Date: 2026-01-14
Rev Recd Date: 2026-01-21

Available Online: 2026-02-07

Abstract

Abstract

Background
Diamond is considered a promising candidate for photoconductive semiconductor switches (PCSSs) due to its exceptional material properties.
Purpose
However, the development of high-performance diamond PCSSs is primarily impeded by their high on-state resistance and relatively low breakdown voltage. This study aims to improve the performance of the diamond PCSSs.
Methods
Passivated with Si₃N₄, vertical PCSSs were fabricated using nitrogen-doped single-crystal diamonds with different doping concentrations and thicknesses. The doping concentrations of diamond samples were analyzed. The photoresponse of the PCSSs was characterized under 532 nm laser excitation over a range of DC bias voltages.
Results
The experimental results showed that the nitrogen-doped diamond PCSSs present a large on/off ratio (～10¹¹) along with sub-nanosecond rise and fall times. Among them, the diamond PCSS device with the highest nitrogen doping concentration exhibited the minimum on-state resistance. By reducing material thickness, a peak output power of 128 kW was achieved at a bias voltage of 4 kV (corresponding to the electric field strength of 110 kV/cm), with the PCSS exhibiting an on-state resistance of 28.9 Ω, further improving the device performance.
Conclusions
Through the design of nitrogen doping concentration, reduction of substrate thickness, and application of Si₃N₄ passivation, this work successfully developed diamond PCSSs with good performance, paving the way for the development of high-performance diamond PCSSs.
- photoconductive semiconductor switch (PCSS),
- diamond,
- nitrogen-doping,
- Si₃N₄ passivation,
- on-state resistance

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References(27)

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