| Citation: | Wang Shengyu, Sun lejia, Guo Jingkai, et al. Development of the magnetically saturated transformer pulse source based on DSRD[J]. High Power Laser and Particle Beams. doi: 10.11884/HPLPB202638.250445 |
| [1] |
陈锦晖, 王磊, 施华, 等. HEPS在轴注入冲击器系统及快脉冲电源样机研制[J]. 强激光与粒子束, 2019, 31: 040017 doi: 10.11884/HPLPB201931.190007
Chen Jinhui, Wang Lei, Shi Hua, et al. Application of fast pulsed power supply to high energy photon source[J]. High Power Laser and Particle Beams, 2019, 31: 040017 doi: 10.11884/HPLPB201931.190007
|
| [2] |
段鑫沛, 朱云娇, 殷亚楠, 等. 电磁脉冲对半导体器件影响机制研究概述[J]. 中国集成电路, 2025, 34(3): 43-49 doi: 10.3969/j.issn.1681-5289.2025.03.007
Duan Xinpei, Zhu Yunjiao, Yin Ya’nan, et al. An overview of the influence mechanism of electromagnetic pulse on semiconductor devices[J]. China Integrated Circuit, 2025, 34(3): 43-49 doi: 10.3969/j.issn.1681-5289.2025.03.007
|
| [3] |
Prokhorenko V, Ivashchuk V, Korsun S. Drift step recovery devices utilization for electromagnetic pulse radiation[C]//Proceedings of the 10th International Conference on Grounds Penetrating Radar, 2004. GPR 2004. 2005: 195-198.
|
| [4] |
Korotkov S V, Aristov Y V, Zhmodikov A L, et al. A modular drift step-recovery diode generator for nanosecond pulse technologies[J]. Instruments and Experimental Techniques, 2016, 59(3): 356-361. doi: 10.1134/S0020441216020226
|
| [5] |
Sugai T, Liu Wei, Tokuchi A, et al. Influence of a circuit parameter for plasma water treatment by an inductive energy storage circuit using semiconductor opening switch[J]. IEEE Transactions on Plasma Science, 2013, 41(4): 967-974. doi: 10.1109/TPS.2013.2251359
|
| [6] |
Kardo-Sysoev A F, Efanov V M, Chashnikov I G. Fast power switches from picosecond to nanosecond time scale and their application to pulsed power[C]//Proceedings of the Digest of Technical Papers. 10th IEEE International Pulsed Power Conference. 1995: 342-347.
|
| [7] |
吴佳霖, 刘英坤. 高功率半导体开关器件DSRD的研究进展[J]. 微纳电子技术, 2015, 52(4): 211-215,250 doi: 10.13250/j.cnki.wndz.2015.04.002
Wu Jialin, Liu Yingkun. Research development of the high power semiconductor switching device DSRD[J]. Micronanoelectronic Technology, 2015, 52(4): 211-215,250 doi: 10.13250/j.cnki.wndz.2015.04.002
|
| [8] |
梁琳, 余岳辉. 半导体脉冲功率开关发展综述[J]. 电力电子技术, 2012, 46(12): 42-45
Liang Lin, Yu Yuehui. Review on development of semiconductor pulsed power switches[J]. Power Electronics, 2012, 46(12): 42-45
|
| [9] |
Benwell A, Burkhart C, Krasnykh A, et al. A 5kV, 3MHz solid-state modulator based on the DSRD switch for an ultra-fast beam kicker[C]//Proceedings of 2012 IEEE International Power Modulator and High Voltage Conference. 2013: 328-331.
|
| [10] |
Min B D, Kim J H, Pavlov E, et al. A compact pulse generator using diode opening switch for engine gas treatment application[C]//Proceedings of the 31st Annual Conference of IEEE Industrial Electronics Society, 2005. IECON 2005. 2005: 3 pp. -.
|
| [11] |
赖雨辰, 谢彦召, 王海洋, 等. 基于DSRD的高重频固态脉冲源的研制[J]. 强激光与粒子束, 2020, 32: 105002 doi: 10.11884/HPLPB202032.200102
Lai Yuchen, Xie Yanzhao, Wang Haiyang, et al. Development of the high repetitive frequency solid-state pulse generator based on DSRD[J]. High Power Laser and Particle Beams, 2020, 32: 105002 doi: 10.11884/HPLPB202032.200102
|
| [12] |
史晓蕾, 陈锦晖, 王冠文, 等. 一种基于磁饱和变压器的DSRD脉冲电源设计[J]. 强激光与粒子束, 2020, 32: 025020 doi: 10.11884/HPLPB202032.190387
Shi Xiaolei, Chen Jinhui, Wang Guanwen, et al. Design of drift step recovery diode pulse power generator based on magnetic saturation transformer[J]. High Power Laser and Particle Beams, 2020, 32: 025020 doi: 10.11884/HPLPB202032.190387
|
| [13] |
余岳辉, 梁琳. 脉冲功率器件及其应用[M]. 北京: 机械工业出版社, 2010: 212-217
Yu Yuehui, Liang Lin. Pulsed power device and its applications[M]. Beijing: China Machine Press, 2010: 212-217
|
| [14] |
Grekhov I V, Mesyats G A. Physical basis for high-power semiconductor nanosecond opening switches[J]. IEEE Transactions on Plasma Science, 2000, 28(5): 1540-1544. doi: 10.1109/27.901229
|
| [15] |
Brylevsky V I, Efanov V M, Kardo-Sysyev A F, et al. Power nanosecond semiconductor opening plasma switches[C]//Proceedings of 1996 International Power Modulator Symposium. 1996: 51-54.
|