Electrothermal coupling numerical simulation of avalanche transistors based on Lattice-Boltzmann Method

Zhang Xiao; Chen Liang; Dong Ning; Liu Xing; Hou Yu

doi:10.11884/HPLPB202638.250479

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Article Navigation > High Power Laser and Particle Beams > 2026 > Accepted Manuscript

Zhang Xiao, Chen Liang, Dong Ning, et al. Electrothermal coupling numerical simulation of avalanche transistors based on Lattice-Boltzmann Method[J]. High Power Laser and Particle Beams. doi: 10.11884/HPLPB202638.250479

Citation:

Zhang Xiao, Chen Liang, Dong Ning, et al. Electrothermal coupling numerical simulation of avalanche transistors based on Lattice-Boltzmann Method[J]. High Power Laser and Particle Beams. doi: 10.11884/HPLPB202638.250479

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Electrothermal coupling numerical simulation of avalanche transistors based on Lattice-Boltzmann Method

doi: 10.11884/HPLPB202638.250479

Zhang Xiao^1
,,
Chen Liang^{1
,
,},
Dong Ning²,
Liu Xing²,
Hou Yu¹

1.
School of Energy and Power Engineering , Xi’an Jiaotong University, Xi’an 710049, China
2.
School of Electrical Engineering , Xi’an Jiaotong University, Xi’an 710049, China

Received Date: 2025-12-25
Accepted Date: 2026-03-12
Rev Recd Date: 2026-03-23

Available Online: 2026-04-13

Abstract

Abstract

Background
Avalanche transistors are extensively employed in microwave devices, pulse power supplies, and various other applications. Owing to their capability of generating instantaneous high power, significant thermal management challenges arise. The active region of an avalanche transistor operates at the micrometer scale, where classical Fourier's law of heat conduction becomes inadequate due to the breakdown of phonon diffusive transport assumptions. At such microscopic dimensions, the heat transfer mechanism deviates markedly from that at macroscopic dimensions. The Boltzmann Transport Equation (BTE) of phonon scattering, which remains valid across multiple spatiotemporal scales, provides a robust framework for modeling non-Fourier thermal transport phenomena.
Purpose
This study aims to propose a new electrothermal coupling method for simulating the working process semiconductor devices, in order to capture the non-Fourier heat conduction effect within semiconductor materials at the micro-nanoscale, where phonon ballistic transport dominates.
Methods
In this study, the phonon BTE is adopted as the governing equation, and the Lattice-Boltzmann Method (LBM) is employed for spatial and temporal discretization to establish a mesoscopic numerical model of non-Fourier heat conduction at the microscale. This model is applied to simulate the transient thermal behavior of avalanche transistors, with input conditions derived from TCAD-based electrothermal coupling simulations.
Results
The internal temperature field of the avalanche transistor predicted by the non-Fourier conduction model is higher than that of the traditional Fourier conduction model.
Conclusions
These findings highlight the importance of incorporating non-Fourier heat conduction effect into the thermal analysis of micro-nano scale devices.
- avalanche transistor,
- non-Fourier heat conduction,
- phonon scattering,
- Lattice-Boltzmann Method,
- electrothermal coupling numerical model

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References(19)

References

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