Electrothermal characterization model for the micro-contact interface of pulse thyristors

Liu Yi; Zeng Chenqian; Li Liuxia; Xiao Shiyun; Lin Fuchang

doi:10.11884/HPLPB202638.250495

Article Contents

Article Navigation > High Power Laser and Particle Beams > 2026 > Accepted Manuscript

Liu Yi, Zeng Chenqian, Li Liuxia, et al. Electrothermal characterization model for the micro-contact interface of pulse thyristors[J]. High Power Laser and Particle Beams. doi: 10.11884/HPLPB202638.250495

Citation:

Liu Yi, Zeng Chenqian, Li Liuxia, et al. Electrothermal characterization model for the micro-contact interface of pulse thyristors[J]. High Power Laser and Particle Beams. doi: 10.11884/HPLPB202638.250495

Citation:

PDF( 5609 KB)

Electrothermal characterization model for the micro-contact interface of pulse thyristors

doi: 10.11884/HPLPB202638.250495

Liu Yi^{1, 2
,},
Zeng Chenqian¹,
Li Liuxia^{1, 2
,
,},
Xiao Shiyun¹,
Lin Fuchang^{1, 2}

1.
State Key Laboratory of Advanced Electromagnetic Technology, School of Electrical and Electronic Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
2.
Key Laboratory of Pulsed Power Technology (Huazhong University of Science and Technology), Ministry of Education, Wuhan 430074, China

Received Date: 2025-12-30
Accepted Date: 2026-03-12
Rev Recd Date: 2026-03-16

Available Online: 2026-04-13

Abstract

Abstract

Background
Pulse thyristors operate under high-current pulse conditions, where repeated combined electromagnetic and thermal stresses cause localised overheating. This leads to electrothermal erosion of the aluminum layer, accelerating thermal fatigue failure of the thyristor.
Purpose
This study aims to establish an electrothermal characterization model to evaluate the electro-erosion effect, thereby providing reliable technical support for the quantitative assessment of pulse thyristor electrical erosion failures.
Methods
A micro-scale contact interface electrothermal characteristic characterization model for pulse thyristors was established. This model comprehensively considers factors such as surface roughness, applied pressure, electrode patterns, and carrier diffusion, and was simulated under pulsed operating conditions. Furthermore, an accelerated aging test for thyristor electro-erosion was designed to validate the simulation's accuracy.
Results
Experimental observations revealed that after 140 repeated discharges, significant aluminum layer erosion appeared on the outer ring of the switch anode surface. When the discharge cycles reached 400, silicon pits emerged closer to the gate position.
Conclusions
The experimental results successfully validated the model's predictive accuracy regarding the failure mechanisms of electrical erosion. This proposed model provides reliable technical support for the quantitative assessment of pulse thyristor electrical erosion failures.
- pulse thyristor,
- electrical erosion,
- carrier diffusion process,
- electrothermal characterization model,
- accelerated aging test

FullText(HTML)

References(17)

References

[1]	张星汝, 冯冰洋, 刘俊, 等. 高电压大电流晶闸管组件的热特性[J]. 强激光与粒子束, 2020, 32: 025016 doi: 10.11884/HPLPB202032.190346 Zhang Xingru, Feng Bingyang, Liu Jun, et al. Thermal characteristics of high voltage and high current thyristor assembly[J]. High Power Laser and Particle Beams, 2020, 32: 025016 doi: 10.11884/HPLPB202032.190346
[2]	Liu Yi, Lin Fuchang, Dai Ling, et al. Development of a compact 450-kJ pulsed-power-supply system for electromagnetic launcher[J]. IEEE Transactions on Plasma Science, 2011, 39(1): 304-309. doi: 10.1109/TPS.2010.2050339
[3]	Taylor P D. 晶闸管的设计与制造[M]. 庞银锁, 译. 北京: 中国铁道出版社, 1992 Taylor P D. Thyristor design and realization[M]. Pang Yinsuo, trans. Beijing: China Railway Publishing House, 1992
[4]	缪云欣. 脉冲晶闸管型强流开关电熔蚀失效特性研究[D]. 武汉: 华中科技大学, 2024 Miao Yunxin. Research on failure characteristics due to electrical melting erosion in heavy current switches based on pulse thyristor[D]. Wuhan: Huazhong University of Science and Technology, 2024
[5]	李辉, 余越, 姚然, 等. 基于多层级模拟的压接型IGBT器件短路失效机理分析[J]. 中国电机工程学报, 2023, 43(6): 2392-2403 doi: 10.13334/j.0258-8013.pcsee.212815 Li Hui, Yu Yue, Yao Ran, et al. Study on the short circuit failure mechanism of press pack IGBT device based on multi-level simulation[J]. Proceedings of the CSEE, 2023, 43(6): 2392-2403 doi: 10.13334/j.0258-8013.pcsee.212815
[6]	Xiao Shiyun, Liu Yi, Li Liuxia, et al. Research on the mechanism of electrical erosion accelerating failure in high-current pulse thyristor-based switches[J]. IEEE Transactions on Device and Materials Reliability, 2025, 25(2): 263-273. doi: 10.1109/TDMR.2025.3565618
[7]	Greenwood J A, Tripp J H. The contact of two nominally flat rough surfaces[J]. Proceedings of the Institution of Mechanical Engineers, 1970, 185(1): 625-633. doi: 10.1243/PIME_PROC_1970_185_069_02
[8]	Hsieh C K. A critical evaluation of surface geometrical parameters for a nominally flat surface model[J]. Journal of Lubrication Technology, 1974, 96(4): 638-639. doi: 10.1115/1.3452512
[9]	张西应, 曾文彬, 操国宏, 等. 大功率晶闸管器件加速老化试验和寿命预测方法研究[J]. 电子质量, 2022(5): 64-68 doi: 10.3969/j.issn.1003-0107.2022.05.015 Zhang Xiying, Zeng Wenbin, Cao Guohong, et al. Research on accelerated aging test and life prediction methods of power thyristor device[J]. Electronics Quality, 2022(5): 64-68 doi: 10.3969/j.issn.1003-0107.2022.05.015
[10]	程礼椿. 电接触理论及应用[M]. 北京: 机械工业出版社, 1988 Cheng Lichun. Theory and applications of electrical contacts[M]. Beijing: Mechanical Industry Press, 1988
[11]	Baliga B J. Fundamentals of power semiconductor devices[M]. Cham: Springer, 2008.
[12]	Klaassen D B M. A unified mobility model for device simulation—II. Temperature dependence of carrier mobility and lifetime[J]. Solid-State Electronics, 1992, 35(7): 961-967. doi: 10.1016/0038-1101(92)90326-8
[13]	Caughey D M, Thomas R E. Carrier mobilities in silicon empirically related to doping and field[J]. Proceedings of the IEEE, 1967, 55(12): 2192-2193. doi: 10.1109/PROC.1967.6123
[14]	Klaassen D B M, Slotboom J W, de Graaff H C. Unified apparent bandgap narrowing in n-and p-type silicon[J]. Solid-State Electronics, 1992, 35(2): 125-129. doi: 10.1016/0038-1101(92)90051-D
[15]	Yu Ruixing, Nazarov A N, Lysenko V S, et al. Impact ionization induced dynamic floating body effect in junctionless transistors[J]. Solid-State Electronics, 2013, 90: 28-33. doi: 10.1016/j.sse.2013.02.056
[16]	Kumari V, Modi N, Saxena M, et al. Modeling and simulation of double gate junctionless transistor considering fringing field effects[J]. Solid-State Electronics, 2015, 107: 20-29. doi: 10.1016/j.sse.2015.01.020
[17]	Ahmeda K, Ubochi B, Benbakhti B, et al. Role of self-heating and polarization in AlGaN/GaN-based heterostructures[J]. IEEE Access, 2017, 5: 20946-20952. doi: 10.1109/ACCESS.2017.2755984