Huang Wenzhong, He Shaotang, Kong Linghua, et al. DIAGNOSTICS OF ELECTRON DENSITY IN LASER-PRODUCED Ge PLASMA[J]. High Power Laser and Particle Beams, 1993, 05: 464-468.
Citation:
Huang Wenzhong, He Shaotang, Kong Linghua, et al. DIAGNOSTICS OF ELECTRON DENSITY IN LASER-PRODUCED Ge PLASMA[J]. High Power Laser and Particle Beams, 1993, 05: 464-468.
Huang Wenzhong, He Shaotang, Kong Linghua, et al. DIAGNOSTICS OF ELECTRON DENSITY IN LASER-PRODUCED Ge PLASMA[J]. High Power Laser and Particle Beams, 1993, 05: 464-468.
Citation:
Huang Wenzhong, He Shaotang, Kong Linghua, et al. DIAGNOSTICS OF ELECTRON DENSITY IN LASER-PRODUCED Ge PLASMA[J]. High Power Laser and Particle Beams, 1993, 05: 464-468.
XUV spectra from GeXX Ⅱ in laser-produced plasmas are identified. The intensities of the transtions from 3p2P3/2-3d2D5/2 and 3s2S1/2 -3p2P3/2 are sensitive to electron densities between 1019 and 1021/cm3 and not sensitive to the electron temperature. Calculations of the intensity ratio vs the electron density are performed. Electron densities in laser-produced Ge plasmas have been deduced from the ratio.