DESIGN AND ADJUSTMENT OF A 100 LEVEL KrF EXCIMER LASER

Shan Yusheng; Wang Naiyan; Ceng Naigong; Zhou Chuangzhi; Yang Dawei; Ma Weiyi; Kang Xiangdong; Huang Debao; Wang Wenchang; Wang Xiaojun; Wang Ganchang

Mar. 1993

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Article Navigation > High Power Laser and Particle Beams > 1993 > 05(01): 5-15

Shan Yusheng, Wang Naiyan, Ceng Naigong, et al. DESIGN AND ADJUSTMENT OF A 100 LEVEL KrF EXCIMER LASER[J]. High Power Laser and Particle Beams, 1993, 05: 5-15.

Citation:

Shan Yusheng, Wang Naiyan, Ceng Naigong, et al. DESIGN AND ADJUSTMENT OF A 100 LEVEL KrF EXCIMER LASER[J]. High Power Laser and Particle Beams, 1993, 05: 5-15.

Shan Yusheng, Wang Naiyan, Ceng Naigong, et al. DESIGN AND ADJUSTMENT OF A 100 LEVEL KrF EXCIMER LASER[J]. High Power Laser and Particle Beams, 1993, 05: 5-15.

Citation:

Shan Yusheng, Wang Naiyan, Ceng Naigong, et al. DESIGN AND ADJUSTMENT OF A 100 LEVEL KrF EXCIMER LASER[J]. High Power Laser and Particle Beams, 1993, 05: 5-15.

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DESIGN AND ADJUSTMENT OF A 100 LEVEL KrF EXCIMER LASER

China Institute of Atomic Energy, P. 0. Box 275 (7), Beijing, 102413

Rev Recd Date: 1992-07-07

Abstract

Abstract

A 100-J KrF laser facility is introduced in this paper.The Marx and diode voltages are 1.1MV and 620kV, respectively, with a diode current of 160kA and e- beam energy of 8kJ. The total gas pressure is 0.25MPa (F₂ : Kr : Ar = 0.4 : 10 : 89.6). The reflectivities of the laser cavity mirrors are 96% and 25%, respectively.
- KrF laser,
- pulse power technology,
- large area e-beam diode,
- high-current e-beam,
- excimer laser oscillator