Cheng Yongkang, Yang Shaopeng, Wang Minxiao, et al. DISCHARGE XeF (C-A) LASER AT REDUCED GAS PRESSURE FOR A Kr-DOPING MIXTURE[J]. High Power Laser and Particle Beams, 1993, 05: 37-41.
Citation:
Cheng Yongkang, Yang Shaopeng, Wang Minxiao, et al. DISCHARGE XeF (C-A) LASER AT REDUCED GAS PRESSURE FOR A Kr-DOPING MIXTURE[J]. High Power Laser and Particle Beams, 1993, 05: 37-41.
Cheng Yongkang, Yang Shaopeng, Wang Minxiao, et al. DISCHARGE XeF (C-A) LASER AT REDUCED GAS PRESSURE FOR A Kr-DOPING MIXTURE[J]. High Power Laser and Particle Beams, 1993, 05: 37-41.
Citation:
Cheng Yongkang, Yang Shaopeng, Wang Minxiao, et al. DISCHARGE XeF (C-A) LASER AT REDUCED GAS PRESSURE FOR A Kr-DOPING MIXTURE[J]. High Power Laser and Particle Beams, 1993, 05: 37-41.
The free running XeF (C-A)lasing was achieved in a commercial discharge excited excimer laser at reduced gas pressure of 0.22MPa and moderate pump rate of 2.76MW/cm3, using a four-component gas mixture doped by Kr with a net peak gain of 1.24%/cm. The laser output, energy density and intrinsic efficiency were 1.17mJ, 9mJ/ L and 0.016%, respectively. The laser spectrum showed a peak wavelength at 477nm and a bandwidth of 32nm (FWHM).
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