一种基于磁饱和变压器的DSRD脉冲电源设计

史晓蕾; 陈锦晖; 王冠文; 王磊; 曾涛; 杨威; 王旭; 苏文同; 吴官健; 史晓蕾; 陈锦晖; 王冠文; 王磊; 曾涛; 杨威; 王旭; 苏文同; 吴官健

doi:10.11884/HPLPB202032.190387

[1]

陈锦晖, 王磊, 施华, 等. HEPS在轴注入冲击器系统及快脉冲电源样机研制[J]. 强激光与粒子束, 2019, 31:040017. (Chen Jinhui, Wang Lei, Shi Hua, et al. Application of fast pulsed power supply to high energy photon source[J]. High Power Laser and Particle Beams, 2019, 31: 040017 doi: 10.11884/HPLPB201931.190007

[2]

刘锡三. 高功率脉冲技术[M]. 北京: 国防工业出版社, 2005.

Liu Xisan. High pulsed power technology[M]. Beijing: National Defense Industry Press, 2005

[3]

Cook E G. Review of solid-state modulators[C]//Proc of XX International Linac Conference. 2000

[4]

吴佳霖, 刘英坤. 高功率半导体开关器件DSRD的研究进展[J]. 微纳电子技术, 2015, 52(4):311-215, 250. (Wu Jialin, Liu Yingkun. Research development of the high power semiconductor switching device DSRD[J]. Micronanoelectronic Technology, 2015, 52(4): 311-215, 250

[5]

梁勤金, 邓晓磊, 石小燕, 等. 新型半导体开关高压电磁脉冲产生技术[J]. 强激光与粒子束, 2012, 24(2):497-500. (Liang Qinjin, Deng Xiaolei, Shi Xiaoyan, et al. High voltage electromagnetic pulse generation using semiconductor switches[J]. High Power Laser and Particle Beams, 2012, 24(2): 497-500 doi: 10.3788/HPLPB20122402.0497

[6]

Krasnykh A. Overview of driver technologies for nanosecond TEM kickers[C]//Proceedings of the 7th International Particle Accelerator Conference. 2016, 3645-3647.

[7]

Benwell A, Burkhart C, Krasnykh A, et al. A 5kV, 3MHz solid-state modulator based on the DSRD switch for an ultra-fast beam kicker[C]//IEEE Power Modulator and High Voltage Conference. 2013: 328-331.

[8]

Lyublinsky A G, Korotkov S V, Aristov Y V, et al. Pulse power nanosecond-range DSRD-based generators for electric discharge technologies[J]. IEEE Trans Plasma Science, 2013, 41(10): 2625-2629. doi: 10.1109/TPS.2013.2264328

[9]

Grekhov I V, Mesyats G A. Physical basis for high-power semiconductor nanosecond opening switches[J]. IEEE Trans Plasma Science, 2000, 28(5): 1540-1544. doi: 10.1109/27.901229

[10]

Brylevsky V I, Efanov V M, Kardo-Sysyev A F, et al. Power nanosecond semiconductor opening plasma switches[J]//Proceedings of IEEE International Power Modulator Symposium. 1996: 51-54.

[11]

张玲, 周斌, 谢义方, 等. 基于漂移阶跃恢复二极管的超宽带探地雷达发射技术[J]. 强激光与粒子束, 2009, 21(12):1854-1858. (Zhang Ling, Zhou Bin, Xie Yifang, et al. Transmitter techniques for ultra-wideband ground penetrating radar based on drift step recovery diodes[J]. High Power Laser and Particle Beams, 2009, 21(12): 1854-1858

[12]

Min B D, Kim J H, Pavlov E, et al. A compact inductive type pulse generator using diodes as opening switch[C]//IEEE Pulsed Power Conference. 2005: 1364-1367.

[13]

Korotkov S V, Aristov Y V, Voronkov V B, et al. A small dynistor generator of high-power nanosecond pulses[J]. Instruments and Experimental Techniques, 2018, 61(1): 44-46. doi: 10.1134/S0020441217060057

[14]

Korotkov S V, Aristov Y V, Voronkov V B, et al. Semiconductor switches of laser pumping pulses of nanosecond duration[J]. Instruments & Experimental Techniques, 2009, 52(5): 699.

[1]	陈锦晖, 王磊, 施华, 等. HEPS在轴注入冲击器系统及快脉冲电源样机研制[J]. 强激光与粒子束, 2019, 31:040017. (Chen Jinhui, Wang Lei, Shi Hua, et al. Application of fast pulsed power supply to high energy photon source[J]. High Power Laser and Particle Beams, 2019, 31: 040017 doi: 10.11884/HPLPB201931.190007
[2]	刘锡三. 高功率脉冲技术[M]. 北京: 国防工业出版社, 2005. Liu Xisan. High pulsed power technology[M]. Beijing: National Defense Industry Press, 2005
[3]	Cook E G. Review of solid-state modulators[C]//Proc of XX International Linac Conference. 2000
[4]	吴佳霖, 刘英坤. 高功率半导体开关器件DSRD的研究进展[J]. 微纳电子技术, 2015, 52(4):311-215, 250. (Wu Jialin, Liu Yingkun. Research development of the high power semiconductor switching device DSRD[J]. Micronanoelectronic Technology, 2015, 52(4): 311-215, 250
[5]	梁勤金, 邓晓磊, 石小燕, 等. 新型半导体开关高压电磁脉冲产生技术[J]. 强激光与粒子束, 2012, 24(2):497-500. (Liang Qinjin, Deng Xiaolei, Shi Xiaoyan, et al. High voltage electromagnetic pulse generation using semiconductor switches[J]. High Power Laser and Particle Beams, 2012, 24(2): 497-500 doi: 10.3788/HPLPB20122402.0497
[6]	Krasnykh A. Overview of driver technologies for nanosecond TEM kickers[C]//Proceedings of the 7th International Particle Accelerator Conference. 2016, 3645-3647.
[7]	Benwell A, Burkhart C, Krasnykh A, et al. A 5kV, 3MHz solid-state modulator based on the DSRD switch for an ultra-fast beam kicker[C]//IEEE Power Modulator and High Voltage Conference. 2013: 328-331.
[8]	Lyublinsky A G, Korotkov S V, Aristov Y V, et al. Pulse power nanosecond-range DSRD-based generators for electric discharge technologies[J]. IEEE Trans Plasma Science, 2013, 41(10): 2625-2629. doi: 10.1109/TPS.2013.2264328
[9]	Grekhov I V, Mesyats G A. Physical basis for high-power semiconductor nanosecond opening switches[J]. IEEE Trans Plasma Science, 2000, 28(5): 1540-1544. doi: 10.1109/27.901229
[10]	Brylevsky V I, Efanov V M, Kardo-Sysyev A F, et al. Power nanosecond semiconductor opening plasma switches[J]//Proceedings of IEEE International Power Modulator Symposium. 1996: 51-54.
[11]	张玲, 周斌, 谢义方, 等. 基于漂移阶跃恢复二极管的超宽带探地雷达发射技术[J]. 强激光与粒子束, 2009, 21(12):1854-1858. (Zhang Ling, Zhou Bin, Xie Yifang, et al. Transmitter techniques for ultra-wideband ground penetrating radar based on drift step recovery diodes[J]. High Power Laser and Particle Beams, 2009, 21(12): 1854-1858
[12]	Min B D, Kim J H, Pavlov E, et al. A compact inductive type pulse generator using diodes as opening switch[C]//IEEE Pulsed Power Conference. 2005: 1364-1367.
[13]	Korotkov S V, Aristov Y V, Voronkov V B, et al. A small dynistor generator of high-power nanosecond pulses[J]. Instruments and Experimental Techniques, 2018, 61(1): 44-46. doi: 10.1134/S0020441217060057
[14]	Korotkov S V, Aristov Y V, Voronkov V B, et al. Semiconductor switches of laser pumping pulses of nanosecond duration[J]. Instruments & Experimental Techniques, 2009, 52(5): 699.