Abstract: InGaZnO ceramic target was obtained by solid-state reactions in atmospheric pressure. Pulsed laser deposition method was applied to growing amorphous InGaZnO films on the quartz glass at room temperature under 1Pa oxygen pressure. The film properties were carefully examined using X-ray diffraction (XRD), transmission spectra, Raman spectra and Hall effect measurement. InGaZnO thin films were amorphous structure and with high quality. The transmitted spectrum shows that thin films exhibit perfect light transmission and narrow band gap. The InGaZnO film contains amorphous structure, perfect light transmission and high carrier mobility at low deposition temperature with inch-indium content. These amorphous IGZO thin films with high mobility and transparency are highly desirable for device fabrication on flexible substrates.