Si－Yb quantum cascade and Si－Yb－Si PIN hybrid light-emitting diode
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摘要: 用纳秒强激光脉冲制备了纳米硅和硅表面的硅镱键合结构,检测了纳米硅表面硅镱键合的发光特性,并对这种结构相应的光致发光（PL）和电致发光（EL）的动力学机理进行了研究。观察到纳米硅表面硅镱键合在700 nm附近尖锐的强发光峰,结合第一性原理计算认为是硅镱键合在弯曲纳米硅表面的局域态发光；利用纳秒脉冲激光沉积技术（PLD）制备多晶硅薄膜,发现由硅镱界面的失配形成表面的突触,其上的硅镱键合产生带隙中的电子局域态,该局域态发光分布在1250~1650 nm波长范围,有增强的EL发光；用PLD方法制备硅镱多层膜量子级联结构,测量到光通信窗口的多个发光峰,并观察到随膜层数增加且发光峰增多。Abstract: Si－Yb quantum cascade and Si－Yb－Si PIN hybrid light-emitting diode is designed for optical communication, which is easy to be integrated on silicon chip. Photoluminescence (PL) and electroluminescence (EL) dynamics on nanosilicon deposited by Yb is investigated. Sharper PL peaks near 700 nm are observed on silicon quantum dots (Si QDs) coated by Yb. The enhanced EL peaks in the wavelength region from 1250 nm to 1650 nm are measured on silicon film deposited by Yb. It is discovered that the EL intensity enhances and the peaks number increases with increasing number of Si－Yb layers. The emission wavelength could be manipulated into the window of optical communication by Si－Yb bonding on nanosilicon.
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Key words:
- photoluminescence /
- electroluminescence /
- manipulating wavelength /
- Si－Yb quantum cascade
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