一种新型等离子体磁控溅射镀膜电源设计

李波; 赵娟; 李洪涛; 叶超; 谭巍巍; 黄斌; 鲁向阳; 黄宇鹏; 张信; 欧阳艳晶; 康传会; 齐卓筠

doi:10.11884/HPLPB201931.190002

一种新型等离子体磁控溅射镀膜电源设计

doi: 10.11884/HPLPB201931.190002

1.
中国工程物理研究院流体物理研究所, 四川绵阳 621900
2.
北京大学物理学院, 北京 100871

基金项目:

中国工程物理研究院院长基金项目 YZJJLX2016002

详细信息

作者简介:
李波(1986—)，男，从事大电流特种电源研究；lbjoyxnh1057@yeah.net

通讯作者:
赵娟(1968—)，女，高级工程师，从事脉冲功率技术研究；zj680525@21cn.com

中图分类号: TN86
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- 被引次数: 0
出版历程
- 收稿日期: 2019-01-02
- 修回日期: 2019-02-25
- 刊出日期: 2019-04-15

Design of new power source for plasma magnetron sputtering coating

1.
Key Laboratory of Pulsed Power, Institute of Fluid Physics, CAEP, P. O. Box 919-805, Mianyang 621900, China
2.
School of Physics, Peking University, Beijing 100871, China

摘要

摘要: 磁控溅射镀膜电源是磁控溅射系统中的关键设备之一。根据铌靶和锡靶溅射处理装置的技术要求，研制了一套输出电压0~800 V可调、脉冲宽度5~200 μs可调、频率0~60 Hz可调、在脉冲电流最大幅值约150 A的磁控溅射镀膜电源，分别给出了该电源在铌靶负载和锡靶负载下的实验结果。设计上采用高压短脉冲预电离一体化高功率双极性脉冲形成电路方法，解决了高功率磁控溅射在重复频率工作下有时不能成功溅射粒子、电离时刻不一致、溅射起弧打火靶面中毒、溅射效率低等问题，降低了磁控溅射装置内气体的工作气压，实现低气压溅射镀膜，提高了靶材的溅射效率，减小薄膜表面粗糙度。通过大量实验论证，该电源达到了理想的溅射效果，满足了指标要求。
- 高压预电离 /
- 双极性脉冲 /
- 低气压溅射 /
- 等离子体
Abstract: Power source of magnetron sputtering coating is one of the key equipment in magnetron sputtering system. A power supply of magnetron sputtering with adjustable output voltage of 0-800 V, pulse width of 5-200 μs, frequency of 0-60 Hz and maximum pulse current of 150 A is developed according to the technical parameters of the sputtering treatment equipment for niobium and tin targets. The experimental results of the prepared power supply with the niobium target load and tin target load are given respectively. To solve the problems of unsuccessful sputtering of particles, inconsistent ionization time, poisoning of target surface and low sputtering efficiency in high power magnetron sputtering under repetitive frequency operation, a high power bipolar pulse forming circuit integrated with high voltage short pulse preionization is adopted. The gas pressure can realize sputtering coating with low pressure. This design has improved the sputtering efficiency of the target and reduced the surface roughness of the film. The results of experiments show that the prepared power supply achieves the ideal sputtering effect and meets the requirements of the index.
- high voltage preionization /
- bipolar pulse /
- low pressure sputtering /
- plasma

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图 1 系统总体结构图

Figure 1. Overall structure of the system

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图 2 脉冲形成电路原理

Figure 2. Schematic of pulse forming circuit

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图 3 驱动电路原理

Figure 3. Schematic of driver circuit

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图 4 输出波形

Figure 4. Output waveforms

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