PIN管的延迟击穿性能初步实验研究
Elementary study of PIN diode as device delayed breakdown
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摘要: 延迟击穿器件(DBD)是一种新型半导体开关。研究了国产PIN二极管的延迟击穿效应，主要进行了单管、串联双管和串并联多管阵列PIN二极管器件的延迟击穿实验。实验结果显示，单管、双管和多管阵列PIN器件都可以陡化输入脉冲前沿，获得快前沿的输出脉冲。单管工作电压2.2 kV，脉冲前沿陡度由095 kV/ns提高到1.37 kV/ns；双管工作电压4.2 kV，脉冲前沿陡度由1.7 kV/ns提高到2.3 kV/ns；多管阵列工作电压8.0 kV，脉冲前沿陡度由2.4 kV/ns提高到3.2 kV/ns。Abstract: This paper summarizes an experimental study of the delayed breakdown performance of silicon PIN diode. Single PIN diode, double series PIN diodes and stacked PIN diodes in parallel and series were tested,the results shown that the pulsefronts of input voltage became steep obviously.Single PIN diode operates at a hold- off voltage exceeding 2.2 kV, and the time rate of voltage(d V /dt) is promoted from 0.95 kV/ns to 1.37 kV/ns. Double series PIN diodes operates at a hold- off voltage of 4.2 kV, and the d V /d t is promoted from 1.7 kV/ns to 2.3 kV/ns. Stacked PIN diodes in parallel and series operate at a hold- off voltage of 8.0 kV,and the d V /d t is promoted from 2.4 kV/ns to 3.2 kV/ns．
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Key words:
- delayed breakdown device /
- pin diode /
- delayed breakdown
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