溅射功率对直流磁控溅射Ti膜结构的影响

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Effects of sputtering power on structure and properties of Ti films deposited by DC magnetron sputtering

1.
Department of Physics,Key Laboratory for Irradiation Physics and Technology of Ministry of Education,Sichuan University,Chengdu 610064 ,China;
2.
Research Center of Laser Fusion,CAEP,P.O.Box 919-987,Mianyang 621900,China;
3.
International Center for Material Physics,Chinese Academy of Sciences,Shenyang 110015,China

摘要: 采用直流磁控溅射方法制备了纯Ti膜，研究了不同功率下Ti膜的沉积速率、表面形貌及晶型结构，并对其应力进行了研究。研究表明：薄膜的沉积速率随溅射功率的增加而增加，当溅射功率为20 W时，原子力显微镜(AFM)图像显示Ti膜光洁、致密，均方根粗糙度最小可达0.9 nm。X射线衍射(XRD)分析表明薄膜的晶体结构为六方晶型，Ti膜应力先随溅射功率增大而增大，在60 W时达到最大值（为945.1 MPa），之后随溅射功率的增大有所减小。
- 应力 /
- 六方晶型 /
- 直流磁控溅射 /
- Ti膜 /
- 直流磁控溅射
Abstract: Pure Ti films were fabricated by DC magnetron sputtering. The deposition rate, surface roughness, crystal structure and stress of Ti films at different sputtering power were studied. The deposition rate in-creases with the increase of the sputtering power. The AFM images show that the films are compact and smooth, and the minimum RMS is 0.9 nm when the sputtering power is 20 W. The X-ray diffraction results indicate that the Ti films are hexagonal structure. The stress in the Ti films increases firstly and reaches a maximum stress of 945.1 MPa when the sputtering power is 60 W, then decreases with higher sputtering power.
- stress /
- hexagonal structure /
- dc magnetron sputtering /
- ti film /
- dc magnetron sputtering

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