强脉冲X射线辐照在Si-SiO2中感生的界面态及退火消除
Radiation-induced interface states of Si-SiO2 by intense pulse X-ray and their annealing
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摘要: 利用强脉冲X射线对Si-SiO2界面进行了辐照，测量了界面态曲线和退火曲线。实验显示，经过强脉冲X射线对Si-SiO2界面进行的辐照，在Si-SiO2界面感生出新的界面态，感生界面态的增加与辐照剂量成正比，并且易出现饱和现象。总结出了感生界面态密度产额Dit随辐照剂量D变化的分布式，并定性分析了Dit随D变化的行为。随后进行的退火实验表明，强脉冲X射线辐照感生出的界面态越多，退火时这些界面态就消除得越快。退火过程显示有滞后现象，即辐照剂量大的阈电压漂移，在退火后恢复的绝对值，要小于辐照剂量小的阈电压漂移。导出了阈电压漂移随退火时间变化的关系，定性解释了滞后现象。Abstract: Intense pulse X-ray is used to irradiate Si-SiO2 interface. Density of Si-SiO2 interface states and its annealing process are measured. Experiment results show that radiation-induced interface traps in Si-SiO2 are increased with dose of intense pulse X-ray. A distribution that density of Si-SiO2 interface states vs. radiation dose is summarized. According to this distribution, radiation impairment effects and mechanism are discussed. Intense pulse X-ray radiation appear following characteristics: (1) Interface states induced by intense radiation are easily saturated. This saturation phenomenon is different from that of common dose radiation. (2) Annealing process shows that the more radiation-induced interface states, the more rapid eliminate these states in annealing process. (3) There ex
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Key words:
- x-ray /
- intense irradiation /
- field interface stateqd.
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