电子束重复增量扫描曝光技术

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Electron beam lithography based on overlapped increment scanning

1.
School of Chemistry and Chemical engineering,Shandong University,Jinan 250100,China;
2.
Department of Scientific Research,Dongying Polytechnic Institute,Dongying 257091,China;
3.
Institute of Electron Beam,Shandong University,Jinan 250061,China

摘要: 提出了电子束重复增量扫描曝光技术新概念，对吸收能量密度与深度和曝光剂量之间的关系、溶解速度与吸收能量密度之间的关系进行了理论分析，发现溶解速度随曝光剂量增加而增大。以此为依据，在SDS-3型电子束曝光机上采用20 keV能量的电子束对570 nm厚的聚甲基丙烯酸甲酯进行了7次重复增量扫描曝光实验，得到了轮廓清晰的梯锥和圆锥3维结构，证明了电子束重复增量扫描曝光技术的可行性，为电子束加工3维结构提供了新工艺。
- 电子束曝光 /
- 吸收能量密度 /
- 剂量 /
- 溶解速度 /
- 抗蚀剂
Abstract: A novel electron-beam lithography based on overlapped increment scanning is presented. The impact of the depth and exposure dose on the absorbed energy density, and the relationship between the solution rate and the absorbed energy density are analyzed theoretically. The result shows the more the exposure dose increases, the greater the solution rate becomes. Based on this, seven overlapped increment scanning exposure experiments are conducted on 570 nm PMMA in the SDS-3 electron beam lithography system at 20 keV and distinct three-dimensional structures of the conic of trapezoid and the conic are obtained. It means the overlapped increment scanning can be used to three-dimensional fabrication.
- eectron beam lithography /
- absorbed energy density /
- dose /
- solution rate /
- resist

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