NaF薄膜的脉冲激光沉积法制备与结构研究
Microstructure and fabrication of NaF film by pulsed laser deposition
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摘要: 采用脉冲激光沉积(PLD)方法在Si(100)衬底上制备了NaF薄膜。在激光重复频率2 Hz，能量密度3 J/cm2，本底真空度5×10-5 Pa的条件下，研究衬底温度对薄膜沉积速率及结构的影响。台阶仪分析表明：薄膜的沉积速率随衬底温度增加呈指数函数增加，算出NaF薄膜的反应激活能为48.67 kJ/mol。原子力显微镜分析表明：薄膜致密而光滑，均方根粗糙度为0.553 nm。扫描电镜截面微观形貌分析表明：薄膜呈现柱状结构。X射线衍射分析表明：NaF薄膜为面心立方晶体结构，并具有显著的择优取向；当衬底温度约为400 ℃时，平均晶粒尺寸最大(129.6 nm)，晶格微应变最小(0.225%)。
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关键词:
- 脉冲激光沉积(PLD) /
- NaF薄膜 /
- ICF靶 /
- 面心立方结构 /
- 反应激活能
Abstract: NaF films with preferred orientation have been successfully deposited on Si(100) substrate by pulsed laser deposition. The testing of surface profiler indicates that the deposition rate of the film increases exponentially with the increase of the substrate temperature. At the same time, the activation energy of atom is caculated which is 48.67 kJ/mol. Atom force microscope photographes of these films show the mean square root of the film is only 0.553 nm. Scaning electron microscopy cross-section morphology analysis shows a columnar microstructure characterization of the films. X-ray diffraction analysis reveals the face centered constructure of films. The largest average crystallite size of 129.6 nm and the smallest lattice strain of 0.225% appear at 400 ℃. -
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