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用拉曼光谱测量离子注入引起的晶格应变

英敏菊,  董西亮

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文章导航 > 强激光与粒子束  > 2008 >  20(04): 0-
英敏菊, 董西亮. 用拉曼光谱测量离子注入引起的晶格应变[J]. 强激光与粒子束, 2008, 20(04).
引用本文: 英敏菊, 董西亮. 用拉曼光谱测量离子注入引起的晶格应变[J]. 强激光与粒子束, 2008, 20(04).
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ying min-ju, dong xi-liang. Meaurement of lattice strain induced by ion implantation using Raman spectroscopy[J]. High Power Laser and Particle Beams, 2008, 20.
Citation: ying min-ju, dong xi-liang. Meaurement of lattice strain induced by ion implantation using Raman spectroscopy[J]. High Power Laser and Particle Beams, 2008, 20.
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用拉曼光谱测量离子注入引起的晶格应变

  • 1.

    北京师范大学 射线束技术与材料改性教育部重点实验室,北京 1 00875;

  • 2.

    北京师范大学 低能核物理研究所, 北京 1 00875;

  • 3.

    北京市辐射中心,北京 1 00875

Meaurement of lattice strain induced by ion implantation using Raman spectroscopy

  • 1.

    Key Laboratory of Beam Technology and Material Modification of Ministry of Education,Beijing Normal University,Beijing 100875,China;

  • 2.

    Institute of Low Energy Nuclear Physics,Beijing Normal University,Beijing 100875,China;

  • 3.

    Beijing Radiation Center,Beijing 100875,China

    摘要
  • 摘要: 对于10个周期的AlAs/GaAs超晶格和25个周期的GaAs/Ga0.92In0.08As超晶格，在室温下进行0.28 MeV的Zn＋注入，注入剂量为5×1013~5×1014 cm-2。通过拉曼光谱测量，定量地分析了由于离子注入所引起的晶格内应变。实验结果表明：在所选用的注入剂量下，由于离子注入引起的应变小于体材料GaAs的最大非驰豫应变值0.038，说明该注入条件下，注入区的结晶态仍然保持得比较好。在较高注入剂量下应变达到饱和，说明缺陷的产生和复合达到了平衡，从而形成了均衡的应变场分布。
    Abstract: The weak damage induced by 0.28 MeV Zn+ ion implantation was studied in AlAs/GaAs and GaAs/Ga0.92In0.08. As superlattice samples using Raman spectroscopy. The variation of the average strain in the implanted layers with the implantation dose was evaluated. It was found that the strain levels caused by ion implantation in the dose range of 5×1013 cm－2 to 5×1014 cm－2 were lower than the reported maximum un-relaxed strain of bulk GaAs. It was shown that the lattice strain caused by ion implantation had become saturated at high implantation doses,indicating that the defect emergence and recombination had reached equilibrium and resulted in a uniform strain field．
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  • 刊出日期:  2008-04-15

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