808 nm大功率半导体激光器阵列的优化设计
Design of 808 nm high power diode laser bars
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摘要: 采用激射波长为808 nm的GaAs/AlGaAs梯度折射率波导分别限制单量子阱结构外延片，制备了沟道深度不同的半导体激光器阵列，并对载流子分布进行理论分析和模拟。理论和实验结果表明：引入脊形台面和隔离沟道后，激光器阵列的输出功率、电光转换效率、斜率效率和光谱特性均有显著提高。随着沟道的加深，对电流侧向扩散的限制作用增强，从而提高了阵列性能。Abstract: Laser bars with 808 nm wavelength are designed and fabricated based on GaAs/AlGaAs graded-index waveguide separate confinement hetero structure single quantum well chip. The enhancement in output power, electro-optical conversion efficiency, slope efficiency and spectral properties has been observed in the laser bars with ridge tops and recesses, which can limit the injection current into the active region. The restrictions in lateral diffusion of the current are enhanced with the deepening of the recess, thus improving the electro-optical properties of the bars．
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Key words:
- semiconductor laser bar /
- recess /
- etching depth /
- current expansion /
- current distribution
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