InGaAs/GaAs应变量子阱结构在1 054 nm激光器中的应用
Application of strained InGaAs/GaAs quantum-well to laser emitting at 1 054 nm
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摘要: 采用金属有机物化学气相淀积（MOCVD）方法生长了InGaAs/GaAs应变量子阱，通过优化生长条件和采用应变缓冲层结构获得量子阱，将该量子阱结构应用于1 054 nm激光器的制备。经测试该器件具有9 mA低阈值电流和0.4 W/A较高的单面斜率效率，在驱动电流为50 mA时测得该应变量子阱光谱半宽为1.6 nm，发射波长为1 054 nm。实验表明:通过优化工艺条件和采用应变缓冲层等手段，改善了应变量子阱质量，该结果应用于1 054 nm激光器的制备，取得了较好的结果。Abstract: An InGaAs/GaAs strained quantum-well was prepared by metal-organic chemical-vapor deposition(MOCVD) on GaAs substrate. The growth condition was chosen and a strained buffer layer(SBL) was adopted during the growth. A quantum-well emitting at 1 054 nm was prepared laser with tilted waveguide. The strained QW laser exhibited threshold current of 9 mA and slope efficiency of 0.4W/A (unused antireflection coating on the facets). The 1 054 nm spectral width of the strained QW laser was 1.6 nm at an injection current of 50 mA. The experimental results indicate: The optimized growth condition and the used strained buffer layer are propitious to significantly improve the laser performance, and the application of strained InGaAs/GaAs quantum-well to laser emitting at 1 054 nm is successful．
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