60keV质子辐照对TiNi记忆合金薄膜马氏体相变的影响
Influence of 60keV proton irradiation on the transformation behavior of a TiNi shape memory alloy thin film
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摘要: 利用磁控溅射的方法在氧化后的单晶Si基片上制备了TiNi形状记忆合金薄膜，利用示差扫描量热法和原位X射线衍射研究了薄膜的马氏体相变特征。通过60keV质子注入（辐照）薄膜样品研究了H+离子对合金薄膜马氏体相变特征的影响，结果表明氢离子注入后引起了马氏体相变开始Ms和结束点Mf以及逆马氏体相变开始As和结束温度Af的下降，而对R相变开始Rs和结束温度Rf影响不大。掠入射X射线衍射表明H+离子注入后有氢化物形成。H+离子注入形成的氢化物是引起相变点的变化的主要因素。
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关键词:
- TiNi形状记忆合金薄膜 /
- H离子注入 /
- 马氏体相变 /
- 示差扫描量热仪 /
- Ｘ射线衍射
Abstract: In this work, TiNi shape memory alloy films on oxidized single crystal Si substrate were successfully prepared by cosputtering of TiNi target with a separated Ti target. The transformation behavior was investigated by differential scanning calorimeter (DSC) and in-situ XRD. 60 keV H+ ions implantation shifted martensite transformation start/finish temperature Ms/Mf and austenite transformation start/finish temperature As/Af to lower temperature, whereas H+ implantation had little effect on the Rphase transformation temperatures Rs and Rf. glance incidence XRD results showed that titanium hydride formed after H+ implantation .The change of transformation temperatures can be attributed to the formation of hydride． -
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