High power microwave effect of PIN limiter induced by single pulse
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摘要: 基于PIN限幅器的等效电路模型，构建了PIN限幅器HPM效应ADS等效电路仿真模型，利用HPM注入实验和等效电路仿真相结合的方法，研究了单个微波脉冲作用下PIN限幅器的响应规律，获取了HPM作用结束后限幅器限幅持续时间与注入脉冲功率、脉宽的对应关系，并对限幅器的限幅持续过程进行了分析。仿真与实验结果表明：PIN限幅器限幅持续时间随着微波脉冲功率和脉宽的增大而变大，实验和仿真结果趋势一致，该研究使用的ADS等效电路模型可以应用于PIN限幅器的高功率微波瞬态响应特性分析研究。Abstract: On the basis of equivalent circuit of PIN limiter, we constructed an equivalent circuit model for the simulation of high power microwave effect of PIN limiter. The response property of PIN limiter under the excitation of single high power microwave pulse is studied by using the equivalent circuit model and injection experiment. The evolution of the limiting duration with the injected pulse power and pulse width of the HPM is obtained. In addition, the limiting duration process is theoretically analyzed. Both the simulation and experiment show that: the limiting duration of the PIN limiter increases with the increase of the input power and pulse width of a single high microwave pulse. The experiment matches simulation very well. The ADS equivalent circuit model used in this study can be extended to investigate the transient effect of high power microwave.
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Key words:
- PIN limiter /
- high power microwave effect /
- limiting duration /
- response property
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图 2 高功率微波信号作用下小信号变化示意图
Figure 2. Schematic illustrating the change of small signal under the excitation of high power microwave
图 3 CLA4601型PIN二极管I区等效电路图
Figure 3. Equivalent circuit of I layer for CLA4601 PIN diode
图 5 不同输入脉宽条件下相对脉冲展宽随输入功率的变化
Figure 5. The change of relative pulse broadening with input power under different input pulse width
图 6 高功率微波注入实验原理图
Figure 6. Schematic diagram for high power microwave injection experiment
图 8 注入实验中示波器测得的典型波形
Figure 8. Typical waveform recorded by digital oscilloscope in the experiment
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