Design of high-power wide-band G-band third harmonic amplifier
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摘要: 针对G波段真空电子器件对大功率、宽频带信号源的需求,开展了G波段三次谐波放大器研究。该放大器利用E波段行波管非线性互作用中的三次谐波电流,通过级联谐波互作用段实现G波段电磁波放大。高性能、实用化G波段宽频带大功率源的设计方案采用非半圆弯曲波导边界折叠波导,利用微波管模拟器套装(MTSS)软件对G波段三次谐波放大器进行模拟优化,结果显示,器件在15 GHz范围内可实现谐波输出功率>3.6 W,转换增益>33.3 dB,电子效率>0.36%。与其他工作在该频段的小型化太赫兹辐射源相比,谐波放大器在输出功率和带宽方面性能优越,为后续开展G波段三次谐波放大器的实际研制工作提供了设计基础。Abstract: To meet the demand of high-power and wide-band signal sources for G-band vacuum electronic devices, the research on G-band third harmonic amplifier is carried out. The amplifier utilizes the third harmonic current in the nonlinear beam-wave interaction of E-band TWT, and realizes G-band electromagnetic wave amplification by cascading harmonic interaction section. The design scheme of high performance and practical G-band wide-band high-power source adopts folded waveguide slow wave structure with modified circular bends, and the G-band third harmonic amplifier is simulated and optimized by using the microwave tube simulator package (MTSS) software. The result shows that the device can obtain harmonic output power greater than 3.6 W in the range of 15 GHz, with conversion gain>33.3 dB and electronic efficiency>0.36%. Compared with other miniaturized terahertz radiation sources in this band, it has superior performance in terms of output power and bandwidth, and thus provides a design basis for the subsequent research of G-band third harmonic amplifier.
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Key words:
- terahertz /
- third harmonic /
- folded waveguide /
- high-power /
- wide-band
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表 1 基波段慢波结构参数
Table 1. Parameters of SWS in fundamental section
type structure p/mm h/mm din/mm dout/mm vp/c Kc/Ω α/(dB·m−1) instruction normal FWG A 0.77 0.52 0 0 − − − initial structure MCB FWG B 0.77 0.52 0 0.1 decrease increase decrease Oout move outward C 0.77 0.32 0 0.1 increase increase decrease shorten h D 0.77 0.32 0.1 0.1 increase increase decrease Oin move inward E 0.74 0.32 0.1 0.1 decrease decrease increase shorten p, final structure 表 2 谐波段慢波结构参数
Table 2. Parameters of SWS in harmonic section
type structure a/mm p/mm din/mm dout vp/c Kc/Ω α/(dB·m−1) instruction normal FWG A 0.84 0.30 0 0 − − − initial structure MCB FWG B 0.84 0.30 0 0.04 decrease increase decrease Oout move outward C 0.84 0.30 0.04 0.04 increase increase decrease Oin move inward D 0.84 0.33 0.04 0.04 increase increase decrease increase p E 0.9 0.33 0.04 0.04 decrease decrease decrease increase a, final structure 表 3 三次谐波放大器几何尺寸
Table 3. Geometry of third harmonic amplifier
period/mm length/mm fundamental section (L1) section 1 0.74 45.88 sever 1 − 2.96 section 2 0.74 59.20 sever 2 − 1.48 harmonic section (L2-L1) section 3 0.33 43.56 -
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