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GJB151B CS115的电路仿真分析(二)——标准应用分析

崔志同 陈伟 董亚运 聂鑫 吴伟 刘政

崔志同, 陈伟, 董亚运, 等. GJB151B CS115的电路仿真分析(二)——标准应用分析[J]. 强激光与粒子束, 2022, 34: 063003. doi: 10.11884/HPLPB202234.210499
引用本文: 崔志同, 陈伟, 董亚运, 等. GJB151B CS115的电路仿真分析(二)——标准应用分析[J]. 强激光与粒子束, 2022, 34: 063003. doi: 10.11884/HPLPB202234.210499
Cui Zhitong, Chen Wei, Dong Yayun, et al. Circuit simulation of GJB151B CS115 part П: The analysis of application[J]. High Power Laser and Particle Beams, 2022, 34: 063003. doi: 10.11884/HPLPB202234.210499
Citation: Cui Zhitong, Chen Wei, Dong Yayun, et al. Circuit simulation of GJB151B CS115 part П: The analysis of application[J]. High Power Laser and Particle Beams, 2022, 34: 063003. doi: 10.11884/HPLPB202234.210499

GJB151B CS115的电路仿真分析(二)——标准应用分析

doi: 10.11884/HPLPB202234.210499
基金项目: 强脉冲辐射环境模拟与效应国家重点实验室基金项目(SKLIPR1901)
详细信息
    通讯作者:

    崔志同,zhitong_cui@163.com

  • 中图分类号: TM13;O441

Circuit simulation of GJB151B CS115 part П: The analysis of application

  • 摘要: 为解决GJB151B CS115电缆束注入脉冲传导敏感度测试项目中的试验设计、效果预估等问题,在介绍不同类型受试线缆感性脉冲电流注入电路模型的基础上,仿真分析了试验设置中的各项因素(线缆设置、末端负载等)对注入到受试设备端口耦合电流/电压的影响,得到了CS115试验设置中存在的一些规律性特征,给出了应用电路仿真开展CS115试验设置分析和优化的方法。
  • 图  1  CS115作用于单线时注入环次级电路模型

    Figure  1.  Circuit model of CS115 injected on the single wire

    图  2  CS115作用于线缆束时注入环次级电路模型

    Figure  2.  Circuit model of CS115 injected on wire bundles

    图  3  CS115作用于同轴电缆时注入环次级电路模型

    Figure  3.  Circuit model of CS115 injected on coaxial cable

    图  4  不同线缆架高下的末端负载耦合电压仿真波形

    Figure  4.  Simulated voltage across the terminal load (VTC)with different height of the wire

    图  5  不同线缆长度下的末端负载耦合电压仿真波形

    Figure  5.  Simulated voltage across the terminal load (VTC)with different length of the wire

    图  6  不同末端负载下的归一化耦合电压仿真波形

    Figure  6.  Simulated normalized voltage across the terminal load (VTC) with different values

    图  7  不同注入位置下末端负载RR上的耦合电压仿真波形

    Figure  7.  Simulated voltage across the terminal load (VTC)with different injected point of the wire

    图  8  脉冲源与电流注入环之间串联不同RB下的末端负载耦合电压仿真波形

    Figure  8.  Simulated normalized voltage across the terminal load (VTC) with different values of the series resistance between the impulse generator and injection probe

    图  9  不同线缆数量下的负载端耦合电压仿真波形

    Figure  9.  Simulated voltage across the terminal load (VTC) with different number of wires

    图  10  不同电缆架高下的芯线末端耦合电压仿真波形

    Figure  10.  Simulated voltage across the terminal load of the inner conductor (VTI) with different height of the coaxial cable

    图  11  不同电缆长度下的芯线末端耦合电压仿真波形

    Figure  11.  Simulated voltage across the terminal load of the inner conductor (VTI) with different length of the coaxial cable

    图  12  不同电缆屏蔽层末端阻抗下的芯线耦合电压仿真波形

    Figure  12.  Simulated voltage across the terminal load of the inner conductor (VTI) with different load impedance of the shield

    图  13  不同转移阻抗下的芯线末端耦合电压仿真波形

    Figure  13.  Simulated voltage across the terminal load of the inner conductor (VTI) with different transfer impedance

    表  1  不同线缆长度、不同注入位置下的耦合电压波形上升沿时间

    Table  1.   Rise time of coupling voltage with different length and injected point of the wire

    lw/mrise time/ns
    Dinj=0.75lwDinj=0.5lwDinj=0.25lwDinj=0.125lw
    0.5 5 6 7 7
    1.0 10 12 13 13
    1.5 13 16 20 20
    下载: 导出CSV

    表  2  不同型号电缆的转移阻抗参数值

    Table  2.   Transfer impedance of different coaxial cables

    cable Rdc/mΩLt/nH
    RG-5814.21.00
    RG-30314.10.43
    RG-2226.60.92
    RG-31626.80.88
    RG-10817.64.60
    下载: 导出CSV
  • [1] GJB 151B-2013, 军用设备和分系统电磁发射和敏感度要求与测量[S]

    GJB 151B-2013, Electromagnetic emission and susceptibility requirements and measurements for military equipment and subsystems[S]
    [2] Cui Zhitong, Grassi F, Pignari S A. Circuit modeling of the test setup for pulsed current injection[C]//Proceedings of 2016 Asia-Pacific International Symposium on Electromagnetic Compatibility. Shenzhen, China: IEEE, 2016.
    [3] 崔志同, 毛从光, 孙蓓云. 感性脉冲电流注入装置的PSPICE电路建模[J]. 电子学报, 2017, 45(6):1513-1517. (Cui Zhitong, Mao Congguang, Sun Beiyun. SPICE modeling of pulsed current injection with inductive coupling[J]. Acta Electronica Sinica, 2017, 45(6): 1513-1517 doi: 10.3969/j.issn.0372-2112.2017.06.033
    [4] Cui Zhitong, Grassi F, Pignari S A, et al. Pulsed current injection setup and procedure to reproduce intense transient electromagnetic disturbance[J]. IEEE Transactions on Electromagnetic Compatibility, 2018, 60(6): 2065-2068. doi: 10.1109/TEMC.2017.2789206
    [5] 崔志同, 陈伟, 董亚运, 等. GJB151B CS115的电路仿真分析(一)——校准设备指标需求分析[J]. 强激光与粒子束, 2022, 34:023002. (Cui Zhitong, Chen Wei, Dong Yayun, et al. Circuit simulation of GJB151B CS115 part І: The analysis of calibration equipment indicators[J]. High Power Laser and Particle Beams, 2022, 34: 023002 doi: 10.11884/HPLPB202234.210406
    [6] Cui Zhitong, Wei Bing, Grassi F, et al. Experimental analysis and circuit modeling of pulsed current injection in wire pairs[C]//Proceedings of 2018 IEEE International Symposium on Electromagnetic Compatibility and 2018 IEEE Asia-Pacific Symposium on Electromagnetic Compatibility. Singapore: IEEE, 2018.
    [7] Grassi F, Marliani F, Pignari S A. Circuit modeling of injection probes for bulk current injection[J]. IEEE Transactions on Electromagnetic Compatibility, 2007, 49(3): 563-576. doi: 10.1109/TEMC.2007.902385
    [8] Paul C R. Introduction to electromagnetic compatibility[M]. New Jersey: Wiley, 1992: 184-198.
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    [10] 崔志同, 魏兵, 吴伟, 等. 同轴电缆感性脉冲电流注入试验仿真方法[J]. 西安电子科技大学学报, 2021, 48(4):42-49. (Cui Zhitong, Wei Bing, Wu Wei, et al. Simulation methods for inductive pulsed current injection on the coaxial cable[J]. Journal of Xidian University, 2021, 48(4): 42-49
    [11] Tesche F M, Ianoz M V, Karlsson T. EMC analysis methods and computational models[M]. New York: John Wiley & Sons, Inc. , 1997.
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出版历程
  • 收稿日期:  2021-11-19
  • 修回日期:  2022-02-21
  • 网络出版日期:  2022-03-01
  • 刊出日期:  2022-06-15

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