Study of packaging in master oscillator power amplifier diode laser chip
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摘要: 结温升高是影响主控振荡放大(MOPA)半导体激光芯片输出功率的重要因素，为解决MOPA芯片的多电极封装和高效散热问题，提出了一种正装和热扩散辅助次热沉相结合的封装结构。建立了该封装结构的3D热模型，对比研究了倒装封装结构、正装无辅助次热沉结构与正装有辅助次热沉结构对MOPA半导体激光器结温的影响。计算结果表明，采用正装有辅助次热沉结构与倒装封装结构散热性能接近，且显著优于正装无辅助次热沉结构，结温降低幅度最高可达40%。另外，采用正装有辅助次热沉封装结构的MOPA半导体激光芯片在连续工作条件下输出功率为10.5 W，谱宽可实现半高全宽小于0.1 nm，中心波长随电流的变化约14 pm/A，实现了10 W级MOPA芯片的封装，验证了该封装结构的有效性。Abstract: The increase in junction temperature is an important factor affecting the output power of master oscillator power amplifier (MOPA) diode laser chip. To achieve the packaging and efficient heat dissipation of the multi-electrode MOPA semiconductor laser chip, a packaging structure that combining P-side up with heat spreader was proposed. An analytical three-dimensional thermal model was employed to study the influence on junction temperature between the P-side down, P-side up without heat spreader and P-side up with heat spreader. According to the three-dimensional thermal model, the conduction-cooled capability between P-side up with heat spreader and P-side down is uniform in this paper. Moreover, the packaging can lead to a maximal 40% decrease on junction temperature. By the way, the P-side up with heat spreader structure was used in MOPA diode laser chip in experiment then 10.5 W output power and the spectrum width (FWHM)＜0.1 nm of the MOPA chip were obtained in CW mode.
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图 2 MOPA芯片结构示意图及封装示意图
Figure 2. Model of MOPA diode laser chip and packaging of the chip
图 4 正装热扩散辅助次热沉与倒装结构对比
Figure 4. Curve of Tj between P-down and P-side up with heat spreader submount
图 9 MOPA芯片连续状态下的输出光谱和不同电流下的光谱变化
Figure 9. Spectrum of the MOPA diode laser in CW mode and the spectrum in different current
表 1 材料参数
Table 1. Material parameters
material thermal conductivity/(W·m−1·K−1) coefficient of thermal expansion/(10−6 K−1) thickness/μm width/mm GaAs 55 6.4 120 1.0 AlN 230 4.5 500 4.5 W90Cu10 180 4.5 1000～3000 2.0～4.5 
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