Two-electron resonance absorption model of laser-semiconductor interaction
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摘要: 通过提出双电子共振吸收模型，解释了激光与半导体材料相互作用时材料吸收光子的物理机制，分析了温度、掺杂数密度对吸收系数的影响；结合热峰模型，将激光的能量注入视为热源，计算出了激光入射时材料中电子温度的时空演化，通过费米狄拉克分布计算出自由电荷数密度分布，得到了电荷激发过程的计算模型，模拟了激光诱发单粒子翻转的过程。模拟结果表明，激光能量与激发电荷总量的关系是非线性的，这意味着激光能量与粒子的线性能量传输之间为非线性对应关系，与实验结果相符。Abstract: This work proposes a two-electron resonance absorption (TERA) model, which explains the reason for laser-induced single event upset (SEU): when the energy of a single photon is not enough to excite the electron-hole pair, there will be de-excitation from a free-electron with higher energy in the conduction band to provide extra energy to excite the electrons in the valence band to the conductive band. This model can explain the physical mechanism of the material’s absorption of photons in the laser-semiconductor material interaction and explain the effect of the ambient temperature and doping concentration of the material on the absorption coefficient through the importance of the concentration of high-energy electrons in the conduction band for TERA. In our simulation, we use laser as the energy source for the thermal spike model, and the spatial-temporal evolution of the electronic temperature in the material during the laser radiation is simulated. Therefore, the change in absorption coefficient can be explained by the TERA. Moreover, according to the Fermi-Dirac distribution, the free charge density is calculated by the electronic temperature of the material. Furthermore, the accumulated free charge induced by laser radiation is given by the integration over the whole volume of the material. Thus, the numerical solution of the charge excitation process is obtained, through which the total amount of excitation charge when the laser induces SEU can be calculated. The simulation results show that the relationship between laser energy and the total excitation charge is nonlinear, i.e., there is a nonlinear correspondence between laser energy and the linear energy transport of particles, which is consistent with the experimental results.
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图 1 双电子共振吸收原理示意图
Figure 1. Schematic diagram of the principle of two-electron resonance absorption
图 2 不同掺杂数密度下吸收系数与电子温度的关系
Figure 2. Relationship between absorption coefficient and electron temperature with different doping concentrations
图 5 等效线性能量传输及电荷量与激光能量的关系
Figure 5. Relationship between equivalent linear energy transfer， excited charge and laser energy
图 6 掺杂数密度为1014 cm−3时，不同温度下激光能量与单粒子效应截面的对应关系
Figure 6. Corresponding relationship between laser energy and SEU cross section at different temperatures when the doping concentration is 1014 cm−3
图 7 掺杂数密度为1011 cm−3时，不同温度下激光能量与单粒子效应截面的对应关系
Figure 7. Corresponding relationship between laser energy and SEU cross section at different temperatures when the doping concentration is 1011 cm−3
表 1 模拟中使用的激光参数
Table 1. Laser parameters used in the simulation
wavelength/nm pulse width/ps laser energy/pJ spot diameter/μm absorption coefficient (intrinsic silicon)/μm−1 1064 25 523 1.6 0.00143 
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