A theoretical study on intense laser induced damage of monocrystalline silicon by absorption front model
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摘要: 改进了描述光学材料强激光损伤的吸收波前模型，在原有模型的基础上引入了杂质缺陷吸收项，并将一维形式推广到了三维。利用改进后的吸收波前模型，数值模拟了红外单晶硅光学材料在波长1064 nm皮秒激光辐照时杂质源（以金属铁为例）附近材料的温度、损伤半径及损伤阈值等变化情况，并分析了光学材料初始温度对损伤阈值的影响规律。数值结果显示：（1）与传统的热传递模型不同，在损伤阈值附近，激光场能量密度从低于损伤到达到（或超出）损伤的微小变化导致温度场的巨大变化；（2）达到损伤能量密度后，杂质附近的最高温度及利用吸收波前表征的材料损伤半径随着辐照能量密度的增加近似线性增长；（3）激光损伤阈值随着材料初始温度的增加而降低。研究结果表明改进后的吸收波前模型可以较好地描述光学材料的杂质缺陷诱导强激光损伤：相比于传统的热超导模型，吸收波前模型可以更合理的表示损伤阈值附近温度场的突变，并可定量分析杂质诱导光学材料的强激光损伤尺寸。另外对单晶硅吸收波前模型的研究还显示提升材料的初始温度可以有效降低材料的强激光损伤阈值，这为提升光电对抗中光电探测器的激光损伤效率提供了一种思路。Abstract: The absorption front model for laser induced damage of optical materials is modified. Different from the original model, the impurity defect absorption term is introduced, and the one-dimensional model is extended to a three-dimensional model. Using the modified absorption front model, temperature distribution near impurity(taking metal iron as an example), damage radius and damage threshold of infrared optical material of monocrystalline silicon are numerically studied, which is irradiated by 1064nm picosecond laser. The influence of initial temperature of the optical material on damage threshold is also studied. Our results show that: (1) Different from the traditional heat thermal transport models, near the damage threshold, a small change of laser field energy density from below to equal to or beyond damage threshold leads to a great change of temperature field in the presently modified absorption front model; (2) The maximum temperature near impurity and damage radius characterized by the absorption front increase approximately linearly with the increase of the irradiation energy density as the laser energy density goes far beyond damage threshold; (3) The laser damage threshold decreases with the increase of the initial temperature of the material. Our results prove that the presently modified absorption front model can better describe the laser damage induced by impurity defects in optical materials. Compared with the traditional thermal transport models, the present absorption front model can represent the sudden change of temperature field near the damage threshold more reasonably, and can quantitatively analyze laser damage size of optical materials induced by impurities. In addition, our results also show that increasing the initial temperature of the material can effectively reduce its laser damage threshold, which provides a way to improve the laser damage efficiency of photodetectors in photoelectric countermeasures.
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图 1 AF模型有限时域差分法的网格划分示意图
Figure 1. Schematic diagram for mesh dividing of FDTD on absorption front (AF) model
图 2 不同激光能量密度照射后杂质源附近的温度场分布(材料初始温度300 K，激光波长1064 nm、 脉宽400 ps；辐照时间 400 ps)
Figure 2. Temperature fields near impurity source after different laser irradiation at different laser energy densities (material’s initial temperature 300 K, laser wavelength 1064 nm, pulse width 400 ps; irradiation time 400 ps)
图 3 不同激光能量密度(0.2，0.24，0.28，0.32，0.36，0.40,0.45 J·cm−2)辐照后铁杂质附近的最高温度(材料初始温度300 K，激光波长1064 nm，脉宽400 ps)
Figure 3. Highest temperature near iron impurity after irradiation at different laser energy densities (0.2, 0.24, 0.28, 0.32, 0.36, 0.40, 0.45 J·cm−2) (initial material temperature 300 K, laser wavelength 1064 nm, pulse width 400 ps)
图 4 材料初始温度300 K，激光脉宽400 ps，波长1064 nm, 激光能量为0.28 J·cm−2的激光辐照后，杂质源附近的温度分布(辐照时间400 ps)
Figure 4. Temperature field near impurity source after laser radiation. Here the initial temperature of material is 300 K, laser pulse width is 400 ps, wavelength is 1064 nm, laser energy is 0.28 J·cm−2 (irradiation time 400 ps)
图 5 材料初始温度300 K，波长1064 nm，脉宽400 ps，不同激光能量密度情况下，辐照过后单晶硅损伤半径变化
Figure 5. Damage radius of monocrystalline silicon after the irradiation of different laser energy densities. Here, initial temperature of the material is 300 K, laser wavelength is 1064 nm, and pulse width is 400 ps
图 6 激光辐照时吸收波前的传播情况(每条曲线时间间隔100 ps）
Figure 6. Propagation of absorption front during laser irradiation (time interval of each curve is 100 ps)
图 7 单晶硅不同初始温度时激光(400 ps, 1064 nm)辐照后铁杂质附近最高温度
Figure 7. Maximum temperature near iron impurity after laser (400 ps, 1064 nm) irradiation at different initial temperatures of monocrystalline silicon
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