Experimental and numerical study of embedded microchannel heat sink
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摘要: 针对高热流密度固体激光器的散热问题，借助微机电系统（MEMS）技术，利用微通道/热源协同设计方法，换热器采用连续S型微通道，并利用歧管形成分层分段流动，研制出了一套微型紧凑的嵌入式歧管S型微通道散热器，并开展了实验研究。使用HFE-7100作为冷却工质，在发热面局部最高温度小于100 ℃、平均温升小于45 ℃的情况下，两相时可带走625 W/cm2的热通量，相比传统的歧管矩形微通道散热器提高了12%，但流阻增大了约56%；利用数值模拟方法，通过改变S型的振幅和波长，根据发热面平均温度、换热面平均努塞尔数、压降和综合性能因子来评估S型微通道散热器的结构参数对其散热能力和流动阻力的影响，寻找S型微通道的最优结构设计参数组合。结果表明该散热器的综合性能因子在一个特定的S型形状下存在最佳值。Abstract: To solve the heat dissipation problem of high heat flux density solid-state laser, a set of micro-compact embedded manifold S-shaped microchannel heat sink was developed using the MEMS technology and the microchannel/heat source co-design method. The heat exchanger uses continuous S-shaped microchannels and the manifold is used to form tiered and segmented flow. Experiment was conducted, using HFE-7100 as the cooling medium. Results show that the heat sink can dissipate 625 W/cm2, with a local maximum temperature of less than 100 ℃ and an average temperature rise of less than 45 ℃. Compared with the traditional manifold rectangular microchannel heat sink, the heat dissipation performance of S-shaped microchannel increased by 12%, but the flow resistance increased by about 56%. Numerical simulation methods were used to evaluate the structural parameters of the S-shaped microchannel heat sink’s heat dissipation ability and flow resistance by changing the amplitude and wavelength of the S shape according to the average temperature of the heating surface, average Nusselt number of the heat transfer surface, pressure drop, and comprehensive performance factor, to find the optimal structure design parameter combination of the S-shaped microchannel. The results show that the comprehensive performance factor of the heat sink has an optimal value under a specific S-shaped configuration, which will be used in subsequent studies.
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图 2 散热器整体示意图、封装实物图和两种微通道（S型和矩形）的微观结构
Figure 2. Schematic diagram of the heat sink, physical diagram of the package and microstructure of the two microchannels (S-shaped and rectangular)
(a) overall diagram; (b) front of microchannel plate; (c) back of microchannel plate; (d)physical view of the heat sink; (e) microchannel structure
图 4 发热面温度随热流密度的变化
Figure 4. Variation of chip surface temperature with heat flow density
图 5 发热面最大温差随热流密度的变化
Figure 5. Variation of maximum temperature difference on the chip surface with heat flow density
图 6 S型（S）与矩形（R）微通道，热流密度作为发热面平均温度的函数
Figure 6. S-shaped (S) and rectangular (R) microchannels with heat flow density as a function of the average temperature of the heat generating surface
图 7 S型（S）与矩形（R）微通道进出口压降随热流密度的变化
Figure 7. Variation of inlet and outlet pressure drop with heat flow density in S-shaped (S) and rectangular (R) microchannels
图 10 歧管S型与歧管矩形微通道的温度、速度云图和流线图
Figure 10. Temperature, velocity nephogram and streamline diagram of manifold S-shaped and straight wall microchannels
图 11 振幅参数A对微通道传热及流动性能的影响
Figure 11. Effect of amplitude parameter A on heat transfer and flow performance of the microchannel
图 12 频率参数B对微通道传热及流动性能的影响
Figure 12. Effect of frequency parameter B on heat transfer and flow performance of the microchannel
表 1 微通道结构参数
Table 1. Microchannel structure parameters
type of channels channel length
lc/mmchannel width
wc/μmchannel depth
ld/μmaspect ratio of
channel αfin width
wf/μmsubstrate thickness
lb/μmchannel number
nrectangular microchannel 5 17 145 8.5 13 350 167 S-shaped microchannel 5 16 156 9.8 14 350 167 
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表 2 几何模型结构参数汇总
Table 2. Summary of structural parameters of the geometric model
channel
length
lc/mmchannel
width
wc/μmfin
width
wf/μmchannel
depth
ld/μmsubstrate
thickness
lb/μminlet
width
lin/μmoutlet
width
lout/μmdiversion
opening
width ldiv/μminlet fluid
temperature
Tin/Kheat
flux
q″/(W·cm−2)5 15 15 150 150 400 400 200 298 300
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表 3 HFE-7100和Si的物性参数
Table 3. Physical parameters of HFE-7100 and Si
material ρ/(kg·m−3) cp/(J·kg−1·K−1 ) k/(W·m−1·K−1) μ/(Pa·s) HFE-7100 1511.23 1235.26 6.46×10−2 6.7917×10−4 Si 2330 712 148 /
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