大功率780 nm单管连续输出16 W和巴条连续输出180 W半导体激光器

李弋; 王浩淼; 张亮; 贺钰雯; 周坤; 杜维川; 何林安; 胡耀; 武德勇; 高松信; 唐淳

doi:10.11884/HPLPB202335.230073

大功率780 nm单管连续输出16 W和巴条连续输出180 W半导体激光器

doi: 10.11884/HPLPB202335.230073

李弋^{1, 2,},
王浩淼^{1, 2},
张亮^{1, 2},
贺钰雯^{1, 2, ,},
周坤^{1, 2},
杜维川^{1, 2},
何林安^{1, 2},
胡耀^{1, 2},
武德勇^{1, 2},
高松信^{1, 2},
唐淳^{1, 2}

1.
中国工程物理研究院应用电子学研究所，四川绵阳 621900
2.
中国工程物理研究院高能激光科学与技术重点实验室，四川绵阳 621900

详细信息

作者简介:
李　弋，njuliyi@aliyun.com

通讯作者:
贺钰雯，18380597763@163.com。

中图分类号: TN248.4
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- 文章访问数: 323
- HTML全文浏览量: 78
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- 被引次数: 0
出版历程
- 收稿日期: 2023-04-02
- 修回日期: 2023-10-15
- 录用日期: 2023-10-15
- 网络出版日期: 2023-10-18
- 刊出日期: 2023-11-11

High power semiconductor lasers with output power over 16 W for single emitter and 180 W for bar operation at 780 nm under CW operation

Li Yi^{1, 2
,},
Wang Haomiao^{1, 2},
Zhang Liang^{1, 2},
He Yuwen^{1, 2
, ,},
Zhou Kun^{1, 2},
Du Weichuan^{1, 2},
He Linan^{1, 2},
Hu Yao^{1, 2},
Wu Deyong^{1, 2},
Gao Songxin^{1, 2},
Tang Chun^{1, 2}

1.
Institute of Applied Electronics, CAEP, Mianyang 621900, China
2.
The Key Labtorary of Science and Technology on High Energy Laser, CAEP, Mianyang 621900, China

摘要

摘要: 设计并制备了780 nm大功率半导体激光器的单管和巴条。采用金属有机化学气相沉积技术制备的外延结构，分别使用GaAsP和GaInP作为量子阱和波导层，限制层是具有高带隙的AlGaInP材料。量子阱与波导层带隙0.15 eV，波导层与限制层带隙0.28 eV，抑制了载流子泄露。1.55 μm厚非对称大光学腔波导结构抑制快轴高阶模，同时缓解腔面损伤问题。为进一步提高腔面损伤阈值，利用超高真空解理和钝化技术，在腔面上沉积了非晶ZnSe钝化层。条宽150 μm、腔长4 mm的单管器件，在电流为15 A时，输出连续功率16.3 W未出现COD现象，斜率效率达到1.27 W/A，电光转换效率为58%，慢轴发散角9.9°，光谱半高宽为1.81 nm。填充因子为40%的厘米巴条，在192 A下实现连续输出功率180 W，电光转换效率为50.7%，光谱宽度仅为2.2 nm。
- 半导体激光器 /
- 泵浦源 /
- 高效率 /
- 腔面光学灾变损伤 /
- 硒化锌
Abstract: The single emitter and bars of 780 nm semiconductor laser have been designed and fabricated. The epitaxial layers were prepared by the metal organic chemical vapor deposition technology. GaAsP and GaInP were used as the quantum well and waveguide layer, respectively. The confinement layers were AlGaInP material with low refractive index. The bandgap between the quantum well and the waveguide layer was 0.15 eV, while the bandgap between the waveguide layer and the confinement layer was 0.28 eV. The high bandgap was effective in suppressing carrier leakage. The 1.55 μm thick large optical cavity epitaxy structure increases the beam’s size and alleviates the cavity optical surface damage problem. The asymmetric structure suppresses high-order fast axis modes. Using the ultra-high vacuum cleavage and passivation technology, an amorphous ZnSe passivation layer was deposited on the laser cavity facets. The ZnSe passivated single emitter device with 150 μm width and 4 mm cavity length, did not show COD phenomenon with 16.3 W continuous-wave output, when the current was 15 A. In this case, the slope efficiency reached 1.27 W/A while the electro-optic conversion efficiency was 58%, and the divergence angle of slow-axis was 9.9° and the spectral width was 1.81 nm. The 1-cm laser bar with lateral emitter fill factor of 40%, reached continuous-wave 180 W output power at 192 A, and the electro-optic conversion efficiency was 50.7%, the spectral width was 2.2 nm.
- semiconductor laser /
- pump source /
- high efficiency /
- catastrophic optical mirror damage /
- ZnSe

HTML全文

图 1 780 nm半导体激光外延的能带结构

Figure 1. Energy bands diagram of 780 nm diode laser

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图 2 780 nm半导体激光外延的折射率及光场分布

Figure 2. Refractive index and mode distribution diagram of 780 nm diode laser

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图 3 巴条上发光点间深隔离槽SEM照片

Figure 3. SEM photo of deep isolation groove between emitters on bar

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图 4 780 nm单管的功率电压效率曲线

Figure 4. Optical output power, voltage, and conversion efficiency as function of current of 780 nm single emitter

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图 5 780 nm单管的远场曲线

Figure 5. Far field of 780 nm single emitter

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图 6 780 nm激光单管的光谱曲线

Figure 6. Spectrum curve of 780 nm single emitter

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图 7 780 nm激光巴条的功率电压效率曲线

Figure 7. Optical output power, voltage, and conversion efficiency as function of current of 780 nm diode laser bar

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图 8 780 nm激光巴条的光谱曲线

Figure 8. Spectrum curve of 780 nm diode laser bar

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表 1 7xx nm激光单管性能对比

Table 1. Performance comparison of 7xx nm diode laser single emitters

diode laser single emitter	wavelength/nm	emitter width/μm	power/W	conversion efficiency/%	fast axis divergence/(°)	slow axis divergence/(°)	spectral width/nm
nLight^[10]	786	200	10	64	50 (FW1/e²)	10 (FW1/e²)	1.7
Coherent^[11]	793	100	5.6	60.3	/	8.8 (FW95%)	/
Ferdinand-Braun-Institut^[5]	780	90	14 (pulse)	45	/	/	/
Ferdinand-Braun-Institut^[5]	780	1200	60 (pulse)	50	/	13 (FW95%)	/
Raybow Optoelectronics^[12]	755	350	12.7	54	37 (FWHM)	8 (FWHM)	/
Institute of Applied Electronics, CAEP^[13]	780	100	10.1	54	46 (FW95%)	7 (FW95%)	2.6
Everbright Photonics^[14]	780	150	7	71	39.9 (FWHM)	/	/
Everbright Photonics^[14]	780	150	16.3	60	39.9 (FWHM)	/	/
this work	780	150	16.3	58	45 (FW95%)	9.9 (FW95%)	1.81

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表 2 7xx nm激光巴条性能对比

Table 2. Performance comparison of 7xx nm diode laser bars

diode laser bar	wavelength/nm	emitter number	emitter width/μm	power/W	conversion efficiency/%	spectral width/nm
DILAS^[3]	780	19	150	110	57	2.2
Ferdinand-Braun-Institut^[15]	780	5	/	172 (pulse)	57	/
this work	780	19	200	180	50.7	2.2

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