Influence of the width of triggering region on output characteristics of GaAs photoconductive semiconductor switch
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摘要: 基于TCAD数值仿真软件，建立了异面结构砷化镓光导开关（GaAs PCSS）的二维数值计算模型，研究了触发区域宽度对GaAs PCSS输出特性影响。首先分析了PCSS的瞬态导通特性，结果表明，急剧增加的载流子浓度与快速演化的空间电离畴使PCSS工作在超快速导通模式。基于此，研究了触发区域宽度对PCSS输出特性影响，结果表明，宽度变大会促进载流子密度急剧倍增和雪崩电离畴的快速演化，缩短PCSS的延迟时间和导通时间。研究分析了不同触发位置对延迟时间与导通时间影响，结果表明，阴极触发的延迟时间明显低于阳极触发，而导通时间受触发位置的影响不显著。Abstract: Based on the theory of multiple avalanche domains, a two-dimensional numerical model for GaAs PCSS with opposed electrode structure is established. The influence of the width of the trigger region on the output characteristics of GaAs PCSS is investigated. Firstly, the switching transient of PCSS is analyzed. The results show that the rapid increase of the carrier concentration and the drastic evolution of the charge domain make PCSS operate in the ultrafast-switching mode. On this basis, this paper studies the influence of the width on the output characteristics of PCSS. The results show that the increase in the width can accelerate the rapid multiplication of carrier concentration and the rapid evolution of avalanche ionization domain, thus shorten the delay time and switching time of PCSS. Further more, the effects of different trigger positions on the delay time and switching time are analyzed. The results show that the delay time under cathode triggering is significantly lower than that under anode triggering, and the switching time is almost unaffected by the trigger position. The above conclusions can provide significant reference for the study on time jitter and synchronization of GaAs PCSS.
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图 2 W=3 μm时PCSS延迟阶段和导通阶段不同时刻的电场分布
Figure 2. Electric field distribution of PCSS in the delay stage and the switching stage when W=3 μm
图 5 t=1.3 ns时，不同W下PCSS的电场分布
Figure 5. Electric field distribution of PCSS at different W when t=1.3 ns
图 6 t=1.3 ns时不同W下PCSS的载流子浓度分布
Figure 6. Carrier concentration distribution of PCSS at different W when t=1.3 ns
图 7 不同W下PCSS在阳极和阴极触发的延迟时间和导通时间
Figure 7. Delay time and switching time of PCSS triggering at anode and cathode at different W
图 8 W=4 μm且t=1.5 ns时，阳极或阴极触发时PCSS的电场分布
Figure 8. When W=4 μm and t=1.5 ns, the electric field distribution of PCSS when anode or cathode is triggered
表 1 t=1.3 ns时不同W下PCSS表面平均载流子浓度和畴内最大峰值场强
Table 1. At t=1.3 ns, the average carrier concentration on the surface of PCSS and the maximum peak field intensity in the domain at different W
width of the trigger
region/μmaverage carrier concentration/(1015 cm−3) maximum peak electric field within
the domain/(kV/cm)2 0.73 72 3 1.00 149 4 1.85 250 5 2.31 375 6 8.77 381 
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