基于小角度V形腔光谱合束的半导体激光器和频

赵宇飞; 佟存柱; 魏志鹏

doi:10.11884/HPLPB202335.230127

基于小角度V形腔光谱合束的半导体激光器和频

doi: 10.11884/HPLPB202335.230127

赵宇飞^{1, 2,},
佟存柱^2, ,,
魏志鹏^1, ,

1.
长春理工大学高功率半导体激光国家重点实验室，长春 130022
2.
中国科学院长春光学精密机械与物理研究所，发光学及应用国家重点实验室，长春 130033

基金项目: 国家自然科学基金项目（62025506）

详细信息

作者简介:
赵宇飞，1472529633@qq.com

通讯作者:
佟存柱， tongcz@ciomp.ac.cn

魏志鹏， weizp@cust.edu.cn

中图分类号: TN24
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- 文章访问数: 368
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- PDF下载量: 61
- 被引次数: 0
出版历程
- 收稿日期: 2023-05-11
- 修回日期: 2023-08-18
- 录用日期: 2023-08-18
- 网络出版日期: 2023-08-21
- 刊出日期: 2023-09-15

Sum frequency generation of semiconductor laser based on V-shaped spectral beam combining

Zhao Yufei^{1, 2
,},
Tong Cunzhu^{2
, ,},
Wei Zhipeng^{1
, ,}

1.
Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology, Changchun 130022 , China
2.
State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China

摘要

摘要: 通过小角度V形腔外腔光谱合束将两个808 nm半导体激光器合束，提高半导体激光器的输出功率及光束质量。两个合束单元分别工作在795.8 nm和800.5 nm，将所获光束通过非线性光学方法进行频率转换。外腔光谱合束实现输出功率为6.5 W快慢轴光束质量M²=2.2×18.5的光束输出，所获光束慢轴M²因子相较于自由运转单管激光器提高了30%，外腔光谱合束效率为83%。基于所获光源，实现了半导体激光器小角度V形腔外腔光谱合束和频，获得输出功率为18.3 mW波长为401.0 nm的蓝光输出，和频效率为0.28%。
- 半导体激光器 /
- 外腔光谱合束 /
- 高功率 /
- 高光束质量 /
- 和频
Abstract: Two 808 nm semiconductor lasers were combined by V-shaped spectral beam combining and locked at 795.8 nm and 800.5 nm respectively. The output power and beam quality in the slow axis were improved significantly. The sum frequency of semiconductor lasers was realized based on the laser source. A laser with an output power of 6.5 W and beam quality of M²=2.2×18.5 was obtained by the spectral beam combining. The M² in slow axis was improved by 30% and the combining efficiency was 83%. The sum frequency laser with 401.0 nm at a power of 18.3 mW was obtained and the efficiency of sum frequency generation was 0.28%.
- diode laser /
- external cavity beam combining /
- high power /
- high beam quality /
- sum frequency generation

HTML全文

图 1 半导体激光器小角度V形腔外腔光谱合束和频实验装置

Figure 1. Experimental setup diagram of sum frequency generation of semiconductor laser based on V-shaped spectral beam combining

FAC—fast-axis collimating lens, SAC—slow-axis collimating lens, BBO—β-BaB₂O₄

下载: 全尺寸图片幻灯片

图 2 实验结果

Figure 2. Experimental result

下载: 全尺寸图片幻灯片

图 3 和频光束功率特性和光谱特性

Figure 3. Power of the blue output beam generated by SFG and characteristics spectral of the sum frequency generation

下载: 全尺寸图片幻灯片

表 1 所采用半导体激光器的参数

Table 1. Structure parameters of the diode lasers used

central wavelength/nm	cavity length/mm	emitter width/μm	Θ_fast 95% power content/(°)	Θ_slow 95% power content/(°)	front facet reflectivity	rear facet reflectivity/%	degree of TE polarization/%
808	3	120	75	15	2.5%	95	＞95

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