基于紧凑型微带谐振单元的大功率高效率小型化功率放大器

刘畅

doi:10.11884/HPLPB202335.230192

基于紧凑型微带谐振单元的大功率高效率小型化功率放大器

doi: 10.11884/HPLPB202335.230192

刘畅^{1, 2,}

1.
西北工业大学微电子学院，西安 710072
2.
西北工业大学长三角研究院，江苏太仓 215400

基金项目: 国家自然科学基金项目(62201466)；太仓市基础研究计划面上项目(TC2021JC29)；西北工业大学青年学者研究基金项目(G2022WD01007)

详细信息

作者简介:
刘　畅，marvin_liu@nwpu.edu.cn

中图分类号: TN722
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- 被引次数: 0
出版历程
- 收稿日期: 2023-06-21
- 修回日期: 2023-07-23
- 录用日期: 2023-07-23
- 网络出版日期: 2023-07-31
- 刊出日期: 2023-10-08

High power and high-efficiency miniaturized power amplifier with compact microstrip resonant cell

Liu Chang^{1, 2
,}

1.
School of Microelectronics, Northwestern Polytechnical University, Xi’an 710072 China
2.
Yangtze River Delta Research Institute of Northwestern Polytechnical University, Taicang 215400, China

摘要

摘要: 介绍了大功率高效率功率放大器（功放）在实际设计时面临的晶体管寄生效应问题，并通过引入晶体管封装寄生模型对本征端阻抗进行等效迁移，进而提高了输出匹配网络设计的便捷性。提出一种基于紧凑型微带谐振单元的电路设计方法及其传输线拓扑结构，其中，紧凑型微带谐振单元的作用是提供功放在三次谐波所需的开路点，从而通过调谐传输线满足相应阻抗条件。其优点还包括：基波频率下插入损耗低、效率高；实际物理尺寸小，可满足小型化需求。为了更好地验证上述理论，基于10 W GaN HEMT CGH40010F晶体管和大功率高效率E/F开关类功放在2.2 GHz的工作频率下进行了具体的电路设计。仿真结果表明，该款功放的最大功率附加效率可达78.4%，最大输出功率可达40.1 dBm，功率增益为12.1 dB。
- 功率放大器 /
- 大功率 /
- 高效率 /
- 小型化 /
- 寄生效应 /
- 紧凑型微带谐振单元
Abstract: This paper presents the problem of the parasitic effect of the transistor for the practical design of high power and high-efficiency power amplifiers (PAs). To solve the problem, we propose a new method: transferring the impedances at the intrinsic plane into those at the package plane with the help of the package model. In this case, the convenience of the design of the output matching network is improved a lot. Moreover, the design methodology of PAs with compact microstrip resonant cell (CMRC) as well as the topology of the transmission-lines (TLs) are also proposed. The CMRC can provide the required open-circuit for the third harmonic. On this basis, the harmonic impedance conditions can be easily realized by the tuning TLs. The insertion loss of the proposed CMRC at the fundamental is low and the physical dimension is relatively small. To verify the feasibility of the proposed circuit, using a 10W GaN HEMT CGH40010F transistor, a switch-mode class E/F PA operating at 2.2 GHz is designed as a prototype. Simulation results show the power-added efficiency of 78.4%, output power of 40.1 dBm, and power gain of 12.1 dB.
- power amplifier /
- high power /
- high-efficiency /
- miniaturized /
- parasitic effect /
- compact microstrip resonant cell

HTML全文

图 1 基于紧凑型微带谐振单元的大功率高效率小型化功放电路结构图

Figure 1. Structure of the proposed high power and high-efficiency miniaturized power amplifiers with CMRC

下载: 全尺寸图片幻灯片

图 2 拟采用的紧凑型微带谐振单元

Figure 2. The proposed compact microstrip resonant cell

下载: 全尺寸图片幻灯片

图 3 所设计的紧凑型微带谐振单元的S参数和输入阻抗的仿真结果

Figure 3. Simulated S-parameters and input impedance of the designed compact microstrip resonant cell

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图 4 基于紧凑型微带谐振单元的大功率高效率小型化功放电路原理图

Figure 4. Schematic of the proposed high power and high-efficiency miniaturized power amplifiers with CMRC

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图 5 仿真功率增益、输出功率和功率附加效率随输入功率的变化图

Figure 5. Simulated gain, output power and power-added efficiency versus input power

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表 1 版图中传输线的实际物理尺寸

Table 1. Physical dimensions of the transmission-lines of the schematic

transmission-line	W/mm	L/mm
T₁	2.4	21.2
T₂	0.7	26.8
T₃	1.6	0.8
T₄	1.5	1.7
T₅	0.9	25.2
T₆	0.9	26.3
T₇	0.9	12.5
T₈	2.2	3.3
T₉	2.4	14.8
T₁₀	2.4	12.1

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