Power pulse sharpening technology based on silicon carbide plasma devices
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摘要: 利用Sentaurus搭建了碳化硅漂移阶跃恢复二极管（DSRD）与雪崩整形二极管（DAS）全电路仿真模型，研究了碳化硅等离子体器件在脉冲锐化方面的能力，并且通过器件内部等离子浓度分布解释了这两种器件实现脉冲锐化的机制。借助碳化硅DSRD可以将峰值超过千伏的电压脉冲的前沿缩短到300 ps；碳化硅DSRD与DAS的组合可以输出脉冲前沿在35 ps、峰值超过2 kV的电压脉冲。仿真与实验发现当触发脉冲与碳化硅DAS匹配时，可以实现快速开启后快速关断，得益于碳化硅DAS这种神奇现象，可以将峰值在两千伏以上脉冲的半高宽缩小到百皮秒量级；通过频谱分析发现脉冲经过DAS整形后，其最高幅值−30 dB对应的频谱带宽扩大了37倍，达到7.4 GHz。Abstract: A full-circuit simulation model of silicon carbide Drift Step Recovery Diode (DSRD) and Diode Avalanche Shaper (DAS) was built based on Sentaurus. By use of simulation, this paper investigates the capability of silicon carbide plasma devices in pulse sharpening and explains the mechanism of pulse sharpening achieved by these two devices through the plasma concentration distribution inside the devices. With the help of a silicon carbide DSRD, it is possible to reduce the pulse front of voltage pulses with peaks in excess of kilovolts to 300 ps. The combination of the silicon carbide DSRD and DAS can output voltage pulses with a pulse front of 35 ps and a peak of more than two kilovolts. Simulations and experiments show that when the trigger pulse is matched to the silicon carbide DAS, fast turn-on and turn-off can be achieved. Thanks to the magical phenomenon of silicon carbide DAS, it can reduce the half-height width of pulses with peak values above 2 kV to the order of 100 ps. Through spectrum analysis, it is found that after the pulse is sharpened by DAS, its −30 dB spectral width is expanded by a factor of 37 to 7.4 GHz.
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Key words:
- silicon carbide /
- drift step recovery diode /
- diode avalanche shaper /
- ultra wide band
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图 1 仿真所用DSRD与DAS的结构示意图以及击穿特性
Figure 1. Structure diagram and breakdown characteristics of DSRD and DAS in the simulation
图 2 DSRD基脉冲锐化电路（红框与蓝框不同时连接）
Figure 2. DSRD based pulse sharpening circuit (red and blue frames are not connected simultaneously)
图 3 基于DSRD与DAS的脉冲锐化电路（红框与绿框不同时连接）
Figure 3. Pulse sharpening circuit based on DSRD and DAS (red and green frames are not connected simultaneously)
图 4 DSRD关断过程中一些关键物理量的变化，其中t1=66.39 ns；t2=67.54 ns；t3=67.84 ns
Figure 4. Changes of some key physical quantities during DSRD shutdown, where t1=66.39 ns; t2 = 67.54 ns;t3 = 67.84 ns
图 5 DAS触发过程中一些关键物理量的变化，其中t1=67.514 ns；t2=67.823 ns；t3=67.858 ns；t4=68.006 ns
Figure 5. Changes of some key physical quantities during DAS triggering, where t1=67.514 ns; t2=67.823 ns; t3=67.858 ns; t4=68.006 ns
图 6 实验中不同电路条件下碳化硅DAS输出脉冲情况
Figure 6. Output pulse of silicon carbide DAS under different circuit conditions in the experiment
图 7 碳化硅等离子体脉冲功率器件对电脉冲的锐化情况
Figure 7. Sharpening effect of silicon carbide plasma pulse power devices on electrical pulses
表 1 仿真所用电路元件参数
Table 1. Circuit component parameters used for simulation
R1/Ω R2/Ω C1/nF C2/nF C3/nF C4/pF L1/nH L2/nH L3/μH L4/μH 50 1000 0.2 2 2 3 80 75 2 2 
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