一种S波段超宽带能量选择表面设计

周涛; 虎宁; 盖龙杰; 黄文涛; 徐延林; 刘培国

doi:10.11884/HPLPB202436.230369

一种S波段超宽带能量选择表面设计

doi: 10.11884/HPLPB202436.230369

1.
国防科技大学电子科学学院，长沙 410073
2.
信息工程大学，郑州 450001

基金项目: 国家自然科学基金重大项目(62293491)；湖南省自然科学基金项目(2022JJ20045)

详细信息

作者简介:
周　涛，2645288679@qq.com

通讯作者:
虎　宁，1141832906@qq.com。

中图分类号: TN713
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- 被引次数: 0
出版历程
- 收稿日期: 2023-10-16
- 修回日期: 2024-01-10
- 录用日期: 2023-12-27
- 网络出版日期: 2024-01-16
- 刊出日期: 2024-02-29

Design of an S-band ultra-wideband energy selective surface

1.
College of Electronic Science and Technology, National University of Defense Technology, Changsha 410073, China
2.
Information Engineering University, Zhengzhou 450001, China

摘要

摘要: 设计了一种工作在S波段的能量选择表面，可实现超宽带自适应强电磁防护。该结构由两层金属周期结构组成，顶层为两个对称分布的金属条和一个金属片，金属条与金属片间加载两个PIN二极管；底层为十字架结构。当入射电磁波场强低于阈值时，能量选择表面工作在透波状态，电磁波可以传播；当入射电磁波场强超过阈值时，金属条和金属片之间产生的感应电压使得PIN二极管导通，此时能量选择表面进入防护状态，电磁波被屏蔽。通过对能量选择表面在PIN二极管导通和截止状态下的表面电流和电场分布以及等效电路模型进行分析，解释了该结构的工作原理。采用PCB制作工艺加工了实物样板并对弱场入射下的插入损耗以及强场入射下的防护效能进行测试。实验和仿真结果匹配性良好，表明该能量选择表面在透波状态下的工作中心频率为2.7 GHz，插入损耗小于1 dB的工作频带为2.2～3.5 GHz；在防护状态下，工作频带的防护效能大于10 dB，达到了超宽带的要求。
- 能量选择表面 /
- 强电磁防护 /
- S波段 /
- 超宽带 /
- 自适应响应 /
- PIN二极管
Abstract: In this paper, an energy selective surface (ESS) structure working in S-band is designed, which can realize ultra-wideband adaptive strong electromagnetic (EM) protection. The ESS is composed of top and bottom layers. The top layer includes two parallel strips and a patch, on which two PIN diodes are loaded, and the bottom layer includes two vertical stripes. When the incident EM intensity is lower than the threshold value, the ESS works in the transparent state, which makes the electromagnetic waves propagate; When the EM intensity exceeds the threshold value, the induced voltage generated between the metal strips and patch makes the PIN diode turn on, and the ESS enters the protective state and the electromagnetic wave is shielded. The working principle of the ESS is analyzed by simulating the surface current and electric field distribution in PIN diode on-off state and equivalent circuit model. The prototype was processed by PCB process and the insertion loss of weak field incident and shielding efficiency of strong field incident were measured. The experimental and simulation results are in great agreement. The results show that in the transparent state, the operating center frequency of the ESS is 2.7 GHz, and the operating band with insertion loss less than 1 dB is 2.2−3.5 GHz. In the protective state, the shielding efficiency of the operating band is greater than 10 dB, which meets the requirement of ultra-wideband.
- energy selective surface /
- strong electromagnetic protection /
- ultra-wideband /
- S-band /
- adaptive respondse /
- PIN diode

HTML全文

图 1 S波段超宽带能量选择表面单元结构图

Figure 1. Structures of the ultra-wideband ESS in the S-band

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图 2 ESS等效电路模型

Figure 2. Equivalent circuit model of the ESS

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图 3 ESS等效电路和全波仿真结果

Figure 3. Equivalent circuit and full-wave simulation results of the ESS

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图 4 频率为3.3 GHz处表面电场分布

Figure 4. Distribution of electric field on the surface at 3.3 GHz

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图 5 频率为3.3 GHz处表面电流密度

Figure 5. Surface current density at 3.3 GHz

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图 6 S波段能量选择表面插入损耗测试环境

Figure 6. Insertion loss (IL) measurement environment of S-band ESS

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图 8 测试结果

Figure 8. Measurement results

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图 7 S波段能量选择表面防护效能测试原理图

Figure 7. Shielding effectiveness (SE) measurement schematic diagram of S-band ESS

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表 1 结构几何尺寸参数

Table 1. Geometric dimensions of this structure (mm)

p	L	c	w	t	s	d
16	15	0.15	1	0.4	0.1	0.508

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表 2 等效电路集总元件参数

Table 2. Parameters of equivalent lumped-element circuit model

Z₀/Ω	Z_d/Ω	C₁/pF	C₂/pF	C₃/pF	C₄/pF	L₁/nH	L₂/nH	R₁/Ω	R_N/Ω	C_F/pF
377	180	1.2	0.4	0.4	0.8	2.1	12.4	3.3 Ω	1.5 Ω	0.15

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表 3 参数性能对比

Table 3. Parameters and performance comparison

reference	thickness/mm	number of diodes for unit cell	1 dB bandwidth/GHz	15 dB bandwidth/GHz
[11]	1.000	4	4.16～4.48	0～3.8
[16]	0.508	9	2.28～3.81	2.0～4.0
this work	0.508	2	2.20～3.50	2.5～4.0

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