高精度固态调制器绝缘栅双极晶体管驱动电路

石秀倩; 何大勇; 李飞; 甘楠; 牟雅洁; 李京祎

doi:10.11884/HPLPB202436.240031

高精度固态调制器绝缘栅双极晶体管驱动电路

doi: 10.11884/HPLPB202436.240031

石秀倩^{1, 2,},
何大勇^{1, 2, ,},
李飞¹,
甘楠¹,
牟雅洁¹,
李京祎^{1, 2, ,}

1.
中国科学院高能物理研究所，北京 100049
2.
中国科学院大学，北京 100049

基金项目: 中国科学院高能物理研究所科技创新项目；国家重大科技基础设施项目（发改高技﹝2017﹞2173号）

详细信息

作者简介:
石秀倩，E-mail：shixq@ihep.ac.cn

通讯作者:
何大勇，E-mail: hedy@ihep.ac.cn。

李京祎，E-mail: jingyili@ihep.ac.cn

中图分类号: TN787
计量
- 文章访问数: 61
- HTML全文浏览量: 30
- PDF下载量: 13
- 被引次数: 0
出版历程
- 收稿日期: 2024-01-23
- 修回日期: 2024-03-12
- 录用日期: 2024-03-12
- 网络出版日期: 2024-03-21

Insulated gate bipolar transistor drive circuit of high pulse repetition precision solid state modulator

Shi Xiuqian^{1, 2
,},
He Dayong^{1, 2
, ,},
Li Fei¹,
Gan Nan¹,
Mu Yajie¹,
Li Jingyi^{1, 2
, ,}

1.
Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China
2.
University of Chinese Academy of Sciences, Beijing 100049, China

摘要

摘要: 加法器式固态调制器是一种使用绝缘栅双极晶体管（IGBT）控制储能电容放电来产生脉冲高压的装置，相比传输线型调制器，具有模块化、稳定性好、寿命长等优势。但IGBT的正常工作需要利用栅极驱动电路将控制信号进行放大才能实现，驱动电路的性能直接影响IGBT的开关特性，最终影响脉冲电压质量，尤其是驱动电路的导通抖动指标，这是影响脉冲电压精度的关键因素之一。根据加法器式固态调制器中IGBT的工作特性，以提高脉冲电压精度为目标，对驱动电路进行研究。分析了开关抖动对输出电压精度的影响，介绍了设计原理，研制了驱动电路板，并利用放电模块对其工作性能进行了实验测试。测试结果表明，该款驱动电路的导通抖动为300 ps，相比1 ns的商用驱动电路抖动压缩至1/3，在1 kV充电电压下，放电模块在0.5 Ω的负载上放电，形成上升时间为500 ns、导通抖动峰、峰值在5 ns以下的脉冲电压，当发生退饱和故障时，驱动电路能够在4 µs时间内关断IGBT，该款驱动电路满足高精度固态调制器的工作要求。
- 固态调制器 /
- 脉冲电压精度 /
- 绝缘栅双极晶体管 /
- 栅极驱动电路 /
- 导通抖动
Abstract: The adder topology solid state modulator is a device that uses insulated gate bipolar transistors (IGBTs) to discharge the stored energy of capacitors to generate high voltage pulses. Compared with pulse forming network (PFN) type modulator, it has lots of advantages such as modularity, good stability, and long lifespan. However, the normal operation of IGBT requires the use of gate drive circuit to amplify the control signal, and the performance of the drive circuit directly affects the switching characteristics of the IGBT, ultimately affects the quality of pulse voltage, especially the turn-on jitter index of the drive circuit, which is one of the key factors affecting the pulse voltage repetition precision. Based on the operating characteristics of IGBT in the adder topology solid state modulator, the drive circuit was studied with the goal of improving pulse voltage repetition precision. The impact of turn-on jitter on voltage repetition precision was analyzed, the design principle was introduced, the drive circuit board was developed, and its working performance was experimentally tested using a discharge module. The test results indicate that the turn-on jitter of the drive circuit is 300 ps, which is three times better than commercial driving circuits. At the charging voltage of 1 kV, the discharge module discharges on a 0.5 Ω load, forming a pulse voltage with the rise time of 500 ns and the peak-to-peak value of turn-on jitter below 5 ns. When the desaturation fault occurs, the drive circuit can turn off the IGBT within 4 µs. This drive circuit meets the working requirements of high pulse repetition precision solid state modulators.
- solid state modulator /
- pulse voltage repetition precision /
- insulated gate bipolar transistor /
- gate drive circuit /
- turn-on jitter

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图 1 加法器式固态调制器的系统结构

Figure 1. System structure of adder topology solid-state modulator

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图 2 加法器式固态调制器系统的等效电路

Figure 2. Equivalent circuit of adder topology solid-state modulator system

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图 3 IGBT驱动电路的总体方案

Figure 3. Overall scheme of IGBT driving circuit

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图 4 降压式(buck)变换器外围电路

Figure 4. Peripheral circuit of buck converter

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图 5 栅极驱动电路

Figure 5. Gate drive circuit

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图 6 保护电路

Figure 6. Protection circuit

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图 7 自身响应的测试环境

Figure 7. Environment for response testing

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图 8 自身响应的测试结果

Figure 8. Results of response testing

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图 9 驱动IGBT能力的测试环境

Figure 9. Environment for driving IGBT capability testing

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图 10 驱动IGBT能力的测试结果

Figure 10. Results of driving IGBT capability testing

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图 11 退饱和保护测试结果

Figure 11. Desaturation protection test results

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图 12 不同充电电压下负载上的脉冲波形图

Figure 12. Pulse waveform on load under different charging voltages

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表 1 实验测试结果

Table 1. Results of experiments

	rise time/ns	fall time/ns	turn-on delay time/ns	turn-off delay time/ns	turn-on jitter (STD)/ps	turn-on jitter (PK-PK)/ns
output waveform of the driver board	86.513	52.562	604.253	510.029	300	2.174
load waveform at 1 kV charging voltage	504.585	333.596	1321.793	1703.321	730	4.899

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