Numerical simulation of Hf ion plasma source ion implantation in Cu substrate
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摘要: 通过SRIM软件对铪离子等离子体源离子注入铜进行了模拟。模拟了铪离子注入铜的核阻止本领、电子阻止本领、入射深度随能量的变化，以及在不同注入条件下铪离子的摩尔浓度分布，并对模拟结果进行了分析。结果显示：能量低于6 MeV时核阻止本领占主导地位，高于6 MeV时电子阻止本领成为主要的能量损失，并且离子注入过程中会出现能量沉积的Bragg峰和质量沉积区域较集中的现象，入射深度随能量的增加而增加。Abstract: The Monte Carlo code SRIM was used to simulate the process of Hf ion plasma source ion implantation in Cu substrate. The relationship between energy and stopping power, the relationship between ion energy and range, and ion distribution of different implantation conditions were simulated. The results show that, nuclear stopping power dominates when the energy is lower than 6 MeV, otherwise electronic stopping power dominates. There are a Bragg peak of the energy deposition process and the phenomenon that the mass deposition area concentrates, and the range generally increases as the energy increases.
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