Abstract: The applications of the magnetic field are favored by a majority of researchers. In this paper, based on theoretical analysis and numerical simulation, a quasi-static magnetic field generator for magnetically applied pressure-shear loading to generate pure shear stress is developed and established. This device consists of four 0.5 mF/15 kV storage capacitors in parallel, which are discharged to a pair magnet coil placed upper and down magnetically driven loading electrode via a 15 kV/30 kA semiconductor silicon stack switch. When the charging voltage is 9 kV, a 10 T quasi-static magnetic field with a rise time of 1.34 ms is obtained in the sample area. The experimental testing and simulation results show that the uniformity distribution of the magnetic field is less than 2% across 7mm radius, which can meet the requirements of the technique of magnetically applied pressure-shear.