Fabrication of silicon microstructure for ICF target
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摘要: 论述了基于反应离子深刻蚀技术加工惯性约束聚变（ICF）靶的硅支撑冷却臂。利用扫描电子显微镜、白光干涉仪和视觉显微系统等对所制备的硅支撑冷却臂的形貌、侧壁陡直度和卡爪径向形变量等参数进行了表征分析。分析结果表明，硅支撑冷却臂的侧壁陡直度大于88，卡爪径向形变量大于20 m，符合靶的设计要求。Abstract: Silicon flexure microstructure has very important function for supporting and cooling roles in ICF target. In this paper, a silicon arm is fabricated using deep reactive ion etching(DRIE) method. The results of scanning electron microscopy(SEM), white light interferometer and optical microscopy measurement show that the Si microstructure has a smooth surface and vertical sidewalls, the angle of vertical sidewall is nearly 88 degrees. The displacement of silicon flexure microstructure along radial direction is more than 20 m.
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Key words:
- ICF target /
- silicon supporting cooling arm /
- deep reactive ion etching
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