Zhou Tianyu, Liu Xuechao, Dai Chongchong, et al. Fabrication and properties of V-doped semi-insulating 6H-SiC photoconductive semiconductor switch[J]. High Power Laser and Particle Beams, 2014, 26: 045043. doi: 10.11884/HPLPB201426.045043
Citation:
Zhou Tianyu, Liu Xuechao, Dai Chongchong, et al. Fabrication and properties of V-doped semi-insulating 6H-SiC photoconductive semiconductor switch[J]. High Power Laser and Particle Beams, 2014, 26: 045043. doi: 10.11884/HPLPB201426.045043
Zhou Tianyu, Liu Xuechao, Dai Chongchong, et al. Fabrication and properties of V-doped semi-insulating 6H-SiC photoconductive semiconductor switch[J]. High Power Laser and Particle Beams, 2014, 26: 045043. doi: 10.11884/HPLPB201426.045043
Citation:
Zhou Tianyu, Liu Xuechao, Dai Chongchong, et al. Fabrication and properties of V-doped semi-insulating 6H-SiC photoconductive semiconductor switch[J]. High Power Laser and Particle Beams, 2014, 26: 045043. doi: 10.11884/HPLPB201426.045043
High power photoconductive semiconductor switches (PCSSs) were fabricated on V-doped semi-insulating 6H-SiC single crystal. The 6H-SiC PCSS were measured by applying a bias voltage from 1 kV to 14 kV. The triggered laser was a 355 nm pulse laser with an energy density of 150 J/mm2. The peak photocurrent shows an increasing trend with improving the applied voltage. The peak photocurrent running through the PCSS and the calculated on-state resistance are 185 A and about 22 respectively when the applied voltage reaches 14 kV, and the corresponding peak power is 2.59 MW.