Hu Kai, Li Tianming, Wang Haiyang, et al. High power microwave effect of multi-stage PIN[J]. High Power Laser and Particle Beams, 2014, 26: 063015. doi: 10.11884/HPLPB201426.063015
Citation:
Hu Kai, Li Tianming, Wang Haiyang, et al. High power microwave effect of multi-stage PIN[J]. High Power Laser and Particle Beams, 2014, 26: 063015. doi: 10.11884/HPLPB201426.063015
Hu Kai, Li Tianming, Wang Haiyang, et al. High power microwave effect of multi-stage PIN[J]. High Power Laser and Particle Beams, 2014, 26: 063015. doi: 10.11884/HPLPB201426.063015
Citation:
Hu Kai, Li Tianming, Wang Haiyang, et al. High power microwave effect of multi-stage PIN[J]. High Power Laser and Particle Beams, 2014, 26: 063015. doi: 10.11884/HPLPB201426.063015
This paper constructs a two-stages PIN limiter with high power microwave(HPM) effect circuit model based on PIN diode electro-thermal self-consistent coupling model. According to the simulation model we design and fabricate two-stage PIN limiter experiment samples, the injected experimental data of input and output characteristics of limiter are basically identical to simulation results which have verified the effectiveness of the multi-stage limiter model and showed that multi-stage PIN limiter model established in this paper can be applied to HPM effect simulation. Simulated using different HPM waveform parameters for the HPM effect, the calculated results indicate that the junction temperature of pre-stage thick I layer PIN diode is higher than that of the post-stage thin I layer PIN diode with the increase of injected power and pulse width, so the thick I layer PIN diode is more susceptible to damage; the frequency and pulse rising time have less influence on junction temperature. Research results have a certain reference for HPM protection of PIN limiter.