Error analysis of drift-diffusion model of semiconductor device numerical simulation

In order to identify and reduce the numerical errors of semiconductor simulator GSRES, drift-diffusion model used in numerical simulation of semiconductor device is studied. Numerical approximation in semiconductor device HPM effect simulator GSRES is analyzed. To build a full physical semiconductor model, Numerical errors caused by approximation of distribution of temperature field in lattice, approximation of recombination rate and generation rate are studied. Application range of simulator is analyzed according to the numerical errors caused by approximation. Terms of the model that need to be improved and enhanced are given.