Analysis of statistical nature of induced voltages at key points in computer box cavity in different frequency ranges

The statistic characteristic of induced voltages at key points in computer box cavity is researched by means of experiments and the random coupling model （RCM）. It is shown that the experiment results generally agree with the theoretical results in trend. The applicability of RCM in analysis and predication of system-level electromagnetic environment effects is validated. A new method based on statistical electromagnetism should be exploited for the analyses of electromagnetic effects for large scale nonparallel surface electron device-box cavity systems.