Sun Yanling, Liu Xiaolong, Liu Huan, et al. Carrier accumulation effect of nonlinear photoconductive semiconductor switches[J]. High Power Laser and Particle Beams, 2014, 26: 075002. doi: 10.11884/HPLPB201426.075002
Citation:
Sun Yanling, Liu Xiaolong, Liu Huan, et al. Carrier accumulation effect of nonlinear photoconductive semiconductor switches[J]. High Power Laser and Particle Beams, 2014, 26: 075002. doi: 10.11884/HPLPB201426.075002
Sun Yanling, Liu Xiaolong, Liu Huan, et al. Carrier accumulation effect of nonlinear photoconductive semiconductor switches[J]. High Power Laser and Particle Beams, 2014, 26: 075002. doi: 10.11884/HPLPB201426.075002
Citation:
Sun Yanling, Liu Xiaolong, Liu Huan, et al. Carrier accumulation effect of nonlinear photoconductive semiconductor switches[J]. High Power Laser and Particle Beams, 2014, 26: 075002. doi: 10.11884/HPLPB201426.075002
GaAs photoconductive semiconductor switches (PCSS) triggered by laser diode were studied experimentally. Our research has focused on the effect of carrier accumulation on output properties of PCSS. The results indicate that the operation mode of PCSS depends on the carrier number and avalanche will occur when carriers accumulate to a certain level. High power output was obtained when the PCSS is triggered by an optical pulse train. Because of the carrier accumulation effect, the work conditions, i.e., the bias voltage and the optical energy, can be reduced. It is of importance to application of PCSS.