Mechanism of crossover of transconductance curves in 0.5 μm multi-finger NMOS FETs before and after γ irradiation

doi: 10.11884/HPLPB201426.084003

• Pan Liding^1,2,3 , 
• Shi Ruiying^{1,2,3 ,  ,}  , 
• Gong Min^1,2,3 , 
• Liu Jie^1,2,3

• 1.

  Microelectronics Department,College of Physical Science and Technology,Sichuan University,Chengdu 610064,China;

• 2.

  Key Laboratory of Radiation Physics and Technology of Ministry of Education,Sichuan University,Chengdu 610064,China;

• 3.

  Key Laboratory of Microelectronics Technology of Sichuan Province,College of Physical Science and Technology,Sichuan University,Chengdu 610064,China