Analysis of single event effect induced by neutron with TCAD

In the case of nuclear fission and fusion, typical energy neutrons acting on semiconductor devices are analyzed, and the distribution of the secondary particles and their energy spectra are generated. As for the worst case of the neutron, the single event effect (SEE) of Static Random Access Memory (SRAM) on 65 nm process is discussed, and the results of TCAD simulation are given. The results show that the 6 transistor SRAM cell commercial structure is difficult to avoid the SEE. Even Double Interlocked Storage Cell (DICE) structure, in the high density design, also due to the charge sharing effect, the occurrence of Single Event Upset (SEU). Because the charge sharing effect is difficult to obtain by SPICE simulation, the TCAD simulation is more suitable for the SRAM design and verification of the neutron single particle immune. At the end, the SRAM design of the neutron single particle immune on the 65nm process is discussed. It is possible to be more competitive in the way that the 6 transistor SRAM cell is added to the capacitor.