Effects of titanium impurities in silicon on electric-field distribution of laser

The laser can do great damage to optical elements, which has become a problem for developing high power and high energy lasers. A main cause of the damage is the highly absorption of laser by impurities imbedded in optical material. The T-matrix method is adopted for simulating the effects of titanium impurities in silicon on the electric-field distribution of laser. We discuss the effects of some parameters, such as the number of impurities, the radius of the impurity, the distance of impurities, the configuration of impurities and the relative dielectric constant of impurity. With the simulation, we know that the maximum of electric-field magnitude lies in the polarization direction of incident wave, the increase of electric-field magnitude depends on the coupling of two adjacent impurities, the maximum of electric-field magnitude becomes larger with reducing the distance of two impurities, and the maximum of electric-field magnitude can be enlarged with reducing the real part or increasing the imaginary part of relative dielectric constant.