High power microwave damage mechanism on high electron mobility transistor amplifier

The device model of AlGaAs/InGaAs high electron mobility transistor(HEMT) low noise amplifier with 0.25 m gate length is established using semiconductor simulation tool and the damage mechanism of 1 GHz microwave injected from gate and drain on HEMT is studied based on various electric field, current density and lattice temperature in device. The simulation results show that when microwave with 40.1 dBm power level is injected from gate, the peak temperature of HEMT will rise with oscillation and achieve the failure level finally. The location beneath the gate close to source is most susceptible to be damaged due to the effect of high current density path and strong electric field. The device responds with different processes when microwave signal with different power level is injected from drain electrode. HEMT would be damaged in the first cycle if the injected power is higher than the threshold. The position near drain electrode is most susceptible to be damaged. Compared with gate injection, its more difficult to damage the device when 1 GHz microwave is injected from drain.