Compact model of millimeter wave noise in nano-MOSFET

Liu Renhao; Wang Jun

doi:10.11884/HPLPB201931.190059

Volume 31 Issue 8

Aug. 2019

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Liu Renhao, Wang Jun. Compact model of millimeter wave noise in nano-MOSFET[J]. High Power Laser and Particle Beams, 2019, 31: 084102. doi: 10.11884/HPLPB201931.190059

Citation:

Liu Renhao, Wang Jun. Compact model of millimeter wave noise in nano-MOSFET[J]. High Power Laser and Particle Beams, 2019, 31: 084102. doi: 10.11884/HPLPB201931.190059

Liu Renhao, Wang Jun. Compact model of millimeter wave noise in nano-MOSFET[J]. High Power Laser and Particle Beams, 2019, 31: 084102. doi: 10.11884/HPLPB201931.190059

Citation:

Liu Renhao, Wang Jun. Compact model of millimeter wave noise in nano-MOSFET[J]. High Power Laser and Particle Beams, 2019, 31: 084102. doi: 10.11884/HPLPB201931.190059

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Compact model of millimeter wave noise in nano-MOSFET

doi: 10.11884/HPLPB201931.190059

Liu Renhao,
Wang Jun^,

School of Information Engineering, Southwest University of Science and Technology, Mianyang 621010, China

Received Date: 2019-03-05
Rev Recd Date: 2019-05-28
Publish Date: 2019-08-15

Abstract

Abstract

In order to apply the complex physical model of millimeter-wave noise of nano-MOSFET to engineering design, the expression of its compact model is studied. The complex noise physical model is simplified by transforming and analyzing the two-port correlation noise matrix of the device. The compact model proposed here not only expresses the non-quasi-static effect of the device with high precision, but also can be directly embedded into the ADS simulation design tool by Verilog-A language in the form of four nodes, thus ensuring the accuracy and greatly reducing the design complexity. The experimental results show that the proposed model is more accurate in both strong and weak inversion regions than the existing three-node model.
- nanometer MOSFET,
- millimeter wave,
- two-port network,
- non-quasi-static effect

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References(9)

References

[1]	Chalkiadaki M A, Enz C C. RF small-signal and noise modeling including parameter extraction of nanoscale MOSFET from weak to strong inversion[J]. IEEE Trans Microwave Theory & Techniques, 2015, 63(7): 1-12. https://ieeexplore.ieee.org/document/7109953/
[2]	Chalkiadaki M A, Enz C C. Accurate RF modeling of nanoscale MOSFET using BSIM6 including low levels of inversion[J]. Microelectronics Journal, 2014, 45(9): 1159-1167. doi: 10.1016/j.mejo.2014.04.030
[3]	Lin D W, Cheng M L, Wang S W, et al. A novel method of MOSFET series resistance extraction featuring constant mobility criteria and mobility universality[J]. IEEE Trans Electron Devices, 2010, 57(4): 890-897. doi: 10.1109/TED.2010.2041508
[4]	Chan L H K, Yeo K S, Chew K W J, et al. High-frequency noise modeling of MOSFETs for ultra low-voltage RF applications[J]. IEEE Trans Microwave Theory & Techniques, 2014, 63(1): 141-154. https://www.sciencedirect.com/science/article/pii/S0038110198001920
[5]	Ong S N, Yeo K S, Chew K W J, et al. A new field dependent mobility model for high frequency channel thermal noise of deep submicron RFCMOS[J]. Solid-State Electronics, 2012, 68(3): 32-37. https://www.sciencedirect.com/science/article/pii/S0038110111003698
[6]	王军, 王林, 王丹丹. 40 nm金属氧化物半导体场效应晶体管感应栅极噪声及互相关噪声频率与偏置依赖性建模[J]. 物理学报, 2016, 65: 237102. https://www.cnki.com.cn/Article/CJFDTOTAL-WLXB201623031.htm Wang Jun, Wang Lin, Wang Dandan. Frequency and bias dependent modeling of induced gate noise and cross-correlation noise in 40 nm metal-oxide-semiconductor field-effect transistors. Acta Physica Sinica, 2016, 65: 237102 https://www.cnki.com.cn/Article/CJFDTOTAL-WLXB201623031.htm
[7]	Chan L H K, Yeo K S, Chew K W J, et al. MOSFET drain current noise modeling with effective gate overdrive and junction noise[J]. IEEE Electron Device Letters, 2012, 33(8): 1117-1119. doi: 10.1109/LED.2012.2203781
[8]	Langevelde R V, Paasschens J C J, Scholten A J, et al. New compact model for induced gate current noise[C]//IEEE International Electron Devices Meeting. 2003.
[9]	李博, 王军. 45 nm MOSFET毫米波小信号等效电路模型参数提取技术[J]. 强激光与粒子束, 2019, 31: 024101. doi: 10.11884/HPLPB201931.180374 Li Bo, Wang Jun. Parameter extraction technique of millimeter wave small-signal equivalent circuit model of 45 nm MOSFET. High Power Laser and Particle Beams, 2019, 31: 024101 doi: 10.11884/HPLPB201931.180374